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Silicon Carbide Mic...
Silicon Carbide Microstrip Detectors for High Resolution X-Ray Spectroscopy
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- Bertuccio, Giuseppe (redaktör/utgivare)
- Politecnico di Milano, Como Campus, Italy,Department of Electronic Engineering and Information Science
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- Puglisi, Donatella (redaktör/utgivare)
- Politecnico di Milano, Como Campus, Italy,Department of Electronic Engineering and Information Science
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- Lanzieri, Claudio (redaktör/utgivare)
- Selex Sistemi Integrati, Rome, Italy
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(creator_code:org_t)
- 2013-03-17
- Engelska 5 s.
- Relaterad länk:
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https://urn.kb.se/re...
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visa fler...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Silicon Carbide (SiC) is a wide bandgap semiconductor with outstanding physical properties for realizing ionizing radiation detectors. We present the manufacturing, electrical and spectroscopic characterization of a prototype SiC microstrip detector constituted by 32 strips, 2 mm long, 25 μm wide with 55 μm pitch. The detectors have been fabricated on 115 μm thick undoped epitaxial 4H-SiC using Ni-SiC Schottky junctions. The measured leakage currents are below 5 fA at 25 °C and 0.6 pA at 107 °C with internal electric fields up to 30 kV/cm. X-ray spectra from 55Fe and 241Am with energy resolution of 224 eV FWHM and 249 eV FWHM (12-13.5 electrons r.m.s.) have been acquired at 20 °C and 80 °C, respectively.
Ämnesord
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Nyckelord
- Silicon carbide
- Microstrip detectors
- X-ray spectroscopy
Publikations- och innehållstyp
- ref (ämneskategori)
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