Resonant ionization of shallow donors in electric field

• In this paper, we report on our experimental observations of the resonant ionization of a phosphorus donor in silicon in a homogeneous electric field, which is expressed in the sudden rise of the conductivity of the sample at a low temperature when the electric field approaches the critical value of ∼3.2 MV m-1. The effect is discussed in terms of the field-induced interaction of the states using a simplified model based on the effective-mass theory. The results from our model are qualitatively similar to the previously published advanced model base, which is based on the first principles; this predicts the ionization thresholds at approximate fields of 2.45 and 3.25 MV m-1, the latter being in very good agreement with our experiment. The possibility of observing more than one resonance is also discussed.

Subject headings

NATURVETENSKAP  -- Kemi (hsv//swe)

NATURAL SCIENCES  -- Chemical Sciences (hsv//eng)

Keyword

Advanced modeling; Critical fields; Effective-mass theory; Electric field approach; Homogeneous electric field; Ionization thresholds; Phosphorus donor; Resonant ionization

Publication and Content Type

ref (subject category)

art (subject category)