Sökning: id:"swepub:oai:DiVA.org:liu-111502" >
Deterministic Singl...
-
Holtz, Per OlofLinköpings universitet,Halvledarmaterial,Tekniska högskolan
(författare)
Deterministic Single InGaN Quantum Dots grown on GaN Micro-Pyramid Arrays
- Artikel/kapitelEngelska2013
Förlag, utgivningsår, omfång ...
-
Trans Tech Publications Inc.2013
-
printrdacarrier
Nummerbeteckningar
-
LIBRIS-ID:oai:DiVA.org:liu-111502
-
https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-111502URI
-
https://doi.org/10.4028/www.scientific.net/AMR.646.34DOI
Kompletterande språkuppgifter
-
Språk:engelska
-
Sammanfattning på:engelska
Ingår i deldatabas
Klassifikation
-
Ämneskategori:vet swepub-contenttype
-
Ämneskategori:art swepub-publicationtype
Anmärkningar
-
InGaN quantum dots (QDs) formed on top of GaN pyramids have been fabricated by means of selective area growth employing hot wall MOCVD. Upon regrowth of a patterned substrate, the growth will solely occur in the holes, which evolve into epitaxially grown wurtzite based pyramids. These pyramids are subsequently overgrown by a thin optically active InGaN well. The QDs are preferably nucleating at the apices of the pyramids as evidenced by the transmission electron microscopy (TEM). The emission from these QDs have been monitored by means of microphotoluminescence (µPL), in which single emission lines have been detected with a sub-meV line width. The µPL measurements undoubtedly reveal that the QDs are located in the apexes of the pyramids, since the sharp emission peaks can only be monitored as the excitation laser is focused on the apices in the µPL. It is also demonstrated that the emission energy can be changed in a controlled way by altering the growth conditions, like the growth temperature and/or composition, for the InGaN layers. The tip of the GaN pyramid is on the nm scale and can be made sharp or slightly truncated. TEM analysis combined with µPL results strongly indicate that the Stranski-Krastanow growth modepreferably is taking place at the microscopic c-plane truncation of the GaN pyramid. Single emission lines with a high degree of polarization is a common feature observed for individual QDs. This emission remains unchanged with increasing the excitation power and sample temperature. An in-plane elongated QD forming a shallow potential with an equal number of electrons and holes is proposed to explain the observed characteristics of merely a single exciton emission with a high degree of polarization.
Ämnesord och genrebeteckningar
Biuppslag (personer, institutioner, konferenser, titlar ...)
-
Hsu, Chi-WeiLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)chihs22
(författare)
-
Lundskog, AndersLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)andlu37
(författare)
-
Karlsson, K. FredrikLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)freka74
(författare)
-
Forsberg, UrbanLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)urbfo25
(författare)
-
Janzén, ErikLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)erija14
(författare)
-
Linköpings universitetHalvledarmaterial
(creator_code:org_t)
Sammanhörande titlar
-
Ingår i:Advanced Materials Research: Trans Tech Publications Inc.646, s. 34-371022-66801662-8985
Internetlänk
Hitta via bibliotek
Till lärosätets databas