Thermal stability and interfacial properties of ZrAlxSiyOz films prepared by pulse-laser deposition

• The thermal stability and interfacial properties of amorphous ZrAlxSiyOz films prepared under high vacuum conditions by pulse-laser deposition are investigated. A high anticrystallization temperature of 916 degrees C is identified by x-ray diffraction and differential scanning calorimeter. However, it is found that ZrOx clusters may precipitate from amorphous film matrix at a temperature as low as 700 degrees C, which subsequently react with Si substrate to form amorphous Zr-silicide interfacial layer. Due to the conductivity and good interfacial morphology of amorphous Zr-silicide interfacial layer, the Pt/ZrAlxSiyOz/IL/Si stack gate structures exhibit good electrical properties such as small equivalent oxide thickness of 0.9 nm, flatband voltage of 0.43 V, and low leakage density of 64 mA/cm(2) at 1 V gate voltage. (c) 2006 American Institute of Physics.

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