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Crossbar arrays of nonvolatile, rewritable polymer ferroelectric diode memories on plastic substrates

van Breemen, Albert J. J. M. (author)
Holst Centre TNO, Netherlands
van der Steen, Jan-Laurens (author)
Holst Centre TNO, Netherlands
van Heck, Geri (author)
Holst Centre TNO, Netherlands
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Wang, Rui (author)
Holst Centre TNO, Netherlands; Eindhoven University of Technology, Netherlands
Khikhlovskyi, Vsevolod (author)
Holst Centre TNO, Netherlands; Eindhoven University of Technology, Netherlands
Kemerink, Martijn (author)
Eindhoven University of Technology, Eindhoven, The Netherlands
Gelinck, Gerwin H. (author)
Holst Centre TNO, Netherlands
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 (creator_code:org_t)
Japan Society of Applied Physics, 2014
2014
English.
In: APPLIED PHYSICS EXPRESS. - : Japan Society of Applied Physics. - 1882-0778. ; 7:3
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • In this paper, we demonstrate a scalable and low-cost memory technology using a phase separated blend of a ferroelectric polymer and a semiconducting polymer as data storage medium on thin, flexible polyester foils of only 25 mu m thickness. By sandwiching this polymer blend film between rows and columns of metal electrode lines where each intersection makes up one memory cell, we obtained 1 kbit cross bar arrays with bit densities of up to 10 kbit/cm(2). (C) 2014 The Japan Society of Applied Physics

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

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