Electron paramagnetic resonance studies of carbon interstitial related defects in 4H-SiC

• In n-type 4H-SiC grown by chemical vapor deposition and irradiated by low-energy (250 keV) electrons, an electron paramagnetic resonance center, labeled EI8a, was observed at room temperature. A short anneal at temperatures in the range of 300-500 °C in darkness changes EI8a to a new center, labeled EI8b, which can be converted back by illumination at room temperature. We show that EI8a and EI8b are the two different configurations of the same defect, labeled EI8, with C1h symmetry and an electron spin S=1/2. The EI8 center is stable up to ~650 °C and annealed out at ~800 °C. Based on the observed hyperfine structures due to the hyperfine interaction between the electron spin and the nuclear spins of four 29Si atoms and three 13C atoms, the EI8 center is suggested to be related to a carbon interstitial cluster.

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