In-grown stacking-faults in 4H-SiC epilayers grown on 2 degrees off-cut substrates

• 4H-SiC epilayers were grown on 2 degrees off-cut substrates using standard silane/propane chemistry, with the aim of characterizing in-grown stacking faults. The stacking faults were analyzed with low temperature photoluminescence spectroscopy, room temperature photoluminescence mappings, room temperature cathodoluminescence and synchrotron white beam X-ray topography. At least three different types of in-grown stacking faults were observed, including double Shockley stacking faults, triple Shockley stacking faults and bar-shaped stacking faults. Those stacking faults are all previously found in 4 degrees and 8 degrees off-cut epilayers; however, the geometrical size is larger in epilayers grown on 2 degrees off-cut substrates due to lower off-cut angle. The stacking faults were formed close to the epilayer/substrate interface during the epitaxial growth. (C) 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim

Ämnesord

NATURVETENSKAP  -- Kemi (hsv//swe)

NATURAL SCIENCES  -- Chemical Sciences (hsv//eng)

Nyckelord

chemical vapor deposition; epitaxy; photoluminescence; SiC; stacking faults

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