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The effect of bilayer regions on the response of epitaxial graphene devices to environmental gating

Hill-Pearce, R. E. (author)
National Phys Lab, England,National Physical Laboratory (NPL)
Eless, V. (author)
National Phys Lab, England,National Physical Laboratory (NPL)
Lartsev, Arseniy, 1987 (author)
Chalmers, Sweden,Chalmers tekniska högskola,Chalmers University of Technology
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Martin, N. A. (author)
National Phys Lab, England,National Physical Laboratory (NPL)
Barker Snook, I. L. (author)
National Phys Lab, England,National Physical Laboratory (NPL)
Helmore, J. J. (author)
National Phys Lab, England,National Physical Laboratory (NPL)
Yakimova, Rositsa (author)
Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Linköping University
Gallop, J. C. (author)
National Phys Lab, England,National Physical Laboratory (NPL)
Hao, L. (author)
National Phys Lab, England,National Physical Laboratory (NPL)
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 (creator_code:org_t)
PERGAMON-ELSEVIER SCIENCE LTD, 2015
2015
English.
In: Carbon. - : PERGAMON-ELSEVIER SCIENCE LTD. - 0008-6223 .- 1873-3891. ; 93, s. 896-902
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • The effect of a bilayer area on the electronic response to environmental gating of a monolayer graphene Hall bar device is investigated using room temperature magnetotransport and scanning Kelvin probe microscopy measurements in a controlled environment. The device is tuned through the charge neutrality point with n-p-n-junctions formed. Scanning Kelvin probe measurements show that the work function of the monolayer graphene decreases more than that of the bilayer area however magnetotransport measurements show a larger change in carrier concentration for bilayer graphene with environmental gating. Interface scattering at the boundary between the monolayer and bilayer regions also affects device response with field-dependent suppression of the conductivity observed near the charge neutrality point. Simultaneous electronic and environmental scanning Kelvin probe measurements are used to build nano-scale maps of the work function of the device surface revealing the areas of greatest work function change with environmental gating. Crown Copyright (C) 2015 Published by Elsevier Ltd. All rights reserved.

Subject headings

NATURVETENSKAP  -- Kemi (hsv//swe)
NATURAL SCIENCES  -- Chemical Sciences (hsv//eng)
TEKNIK OCH TEKNOLOGIER  -- Materialteknik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Materials Engineering (hsv//eng)

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