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  • Thomson, Mark D.Physikalisches Institut, Goethe-University, D-60438 Frankfurt am Main,Germany (author)

Relativistic Doppler reflection as a probe for the initial relaxation of a non-equilibrium electron-hole plasma in silicon

  • Article/chapterEnglish2015

Publisher, publication year, extent ...

  • 2015-10-13
  • Institute of Physics (IOP),2015
  • electronicrdacarrier

Numbers

  • LIBRIS-ID:oai:DiVA.org:liu-123876
  • https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-123876URI
  • https://doi.org/10.1088/1742-6596/647/1/012016DOI

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  • Language:English
  • Summary in:English

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  • Subject category:ref swepub-contenttype
  • Subject category:kon swepub-publicationtype

Notes

  • This paper reviews the status of investigations of the relativistic Doppler reflectionof a broadband terahertz pulse at a counter-propagating plasma front of photo-excited chargecarriers in undoped silicon. When a THz pulse with 20-THz bandwidth impinges onto amoving plasma front with a carrier density in the range of 1019 per cm3, one observes a spectralup-shift, which is, however, much less pronounced than expected from simulations assuming a Drude plasma characterized by a single carrier relaxation time τ of the order of 15-100 fs.Qualitative agreement between simulations and experiments can be achieved if τ is chosen tobe less than 5 fs. In order to explore carrier relaxation in more detail, optical-pump/THz-probeexperiments in the conventional co-propagation geometry were performed. If the pump-probedelay is long enough for monitoring of the equilibrium value of the scattering time, τ rangesfrom 200 fs at low carrier density to 20 fs in the 1019-cm-3 density range. For small (subpicosecond)pump-probe delay, the data reveal a significantly faster scattering, which slowsdown during energy relaxation of the charge carriers.

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  • Meng, FanqiPhysikalisches Institut, Goethe-University, D-60438 Frankfurt am am Main, Germany (author)
  • Sernelius, Bo E.,1948-Linköpings universitet,Teoretisk Fysik,Tekniska fakulteten(Swepub:liu)bose02 (author)
  • Roskos, Hartmut G.Physikalisches Institut, Goethe-University, D-60438 Frankfurt am Main (author)
  • Physikalisches Institut, Goethe-University, D-60438 Frankfurt am Main,GermanyPhysikalisches Institut, Goethe-University, D-60438 Frankfurt am am Main, Germany (creator_code:org_t)

Related titles

  • In:19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures (EDISON'19): Institute of Physics (IOP), s. 012016-012019

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Thomson, Mark D.
Meng, Fanqi
Sernelius, Bo E. ...
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NATURAL SCIENCES
NATURAL SCIENCES
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and Condensed Matter ...
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Linköping University

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