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Ab initio calculations and experimental study of piezoelectric YxIn1-xN thin films deposited using reactive magnetron sputter epitaxy

Tholander, Christopher (author)
Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
Birch, Jens (author)
Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
Tasnádi, Ferenc (author)
Linköpings universitet,Teoretisk Fysik,Tekniska fakulteten
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Hultman, Lars (author)
Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
Palisaitis, Justinas (author)
Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
Persson, Per O A (author)
Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
Jensen, Jens (author)
Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
Sandström, Per (author)
Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
Alling, Björn (author)
Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten,Max-Planck-Institut für Eisenforschung GmbH, Düsseldorf, Germany
Zukauskaitè, Agne (author)
Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten,Fraunhofer Institute for Applied Solid State Physics IAF, Freiburg, Germany
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 (creator_code:org_t)
Elsevier, 2016
2016
English.
In: Acta Materialia. - : Elsevier. - 1359-6454 .- 1873-2453. ; 105, s. 199-206
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • By combining theoretical prediction and experimental verification we investigate the piezoelectric properties of yttrium indium nitride (YxIn1-xN). Ab initio calculations show that the YxIn1-xN wurtzite phase is lowest in energy among relevant alloy structures for 0≤x≤0.5. Reactive magnetron sputter epitaxy was used to prepare thin films with Y content up to x=0.51. The composition dependence of the lattice parameters observed in the grown films is in agreement with that predicted by the theoretical calculations confirming the possibility to synthesize a wurtzite solid solution. An AlN buffer layer greatly improves the crystalline quality and surface morphology of subsequently grown YxIn1-xN films. The piezoelectric response in films with x=0.09 and x=0.14 is observed using piezoresponse force microscopy. Theoretical calculations of the piezoelectric properties predict YxIn1−xN to have comparable piezoelectric properties to ScxAl1-xN.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
NATURVETENSKAP  -- Kemi -- Materialkemi (hsv//swe)
NATURAL SCIENCES  -- Chemical Sciences -- Materials Chemistry (hsv//eng)
NATURVETENSKAP  -- Kemi -- Oorganisk kemi (hsv//swe)
NATURAL SCIENCES  -- Chemical Sciences -- Inorganic Chemistry (hsv//eng)
TEKNIK OCH TEKNOLOGIER  -- Materialteknik -- Annan materialteknik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Materials Engineering -- Other Materials Engineering (hsv//eng)
TEKNIK OCH TEKNOLOGIER  -- Materialteknik -- Bearbetnings-, yt- och fogningsteknik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Materials Engineering -- Manufacturing, Surface and Joining Technology (hsv//eng)

Keyword

YInN
Thin films
Sputter deposition
Piezoelectricity
Ab initio calculations

Publication and Content Type

ref (subject category)
art (subject category)

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