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Effect of boron on ...
Effect of boron on the resistivity of compensated 4H-SiC
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- Ciechonski, Rafal (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Syväjärvi, Mikael (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Kakanakova-Georgieva, Anelia, 1970- (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Yakimova, Rositsa (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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(creator_code:org_t)
- Springer Science and Business Media LLC, 2003
- 2003
- English.
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In: Journal of electronic materials. - : Springer Science and Business Media LLC. - 0361-5235 .- 1543-186X. ; 32:5, s. 452-457
- Related links:
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http://urn.kb.se/res...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Subject headings
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- High-resistivity 4H-SiC samples grown by sublimation with a high growth rate are studied. The measurements show resistivity values up to a high of 104 Ωcm. The secondary ion mass spectroscopy (SIMS) results revealed a presence of only common trace impurities such as nitrogen, aluminum, and boron. To understand the compensation mechanism in these samples, capacitance deep-level transient spectroscopy (DLTS) on the p-type epilayers has been performed. By correlation between the growth conditions and SIMS results, we apply a model in which it is proposed that an isolated carbon vacancy donorlike level is a possible candidate responsible for compensation of the shallow acceptors in p-type 4H-SiC. A relation between cathodoluminescence (CL) and DLTS data is taken into account to support the model.
Keyword
- SiC sublimation epitaxy
- DLTS
- compensation
- deep levels
- carbon vacancy
- high resistivity
- semi-insulating
- NATURAL SCIENCES
- NATURVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
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