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Combined effects of...
Combined effects of Ga, N, and Al codoping in solution grown 3C-SiC
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- Sun, J. W. (författare)
- Groupe d'Etude des Semiconducteurs, UMR 5650, CNRS, Université Montpellier 2, cc 074-GES, 34095 Montpellier Cedex 5, France
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- Zoulis, G. (författare)
- Groupe d'Etude des Semiconducteurs, UMR 5650, CNRS, Université Montpellier 2, cc 074-GES, 34095 Montpellier Cedex 5, France
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- Lorenzzi, J. C. (författare)
- Laboratoire des Multimateriaux et Interfaces, UMR 5615, CNRS, UCB-Lyon1, 43 Bd du 11 nov. 1918, 69622 Villeurbanne, France
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- Jegenyes, N. (författare)
- Laboratoire des Multimateriaux et Interfaces, UMR 5615, CNRS, UCB-Lyon1, 43 Bd du 11 nov. 1918, 69622 Villeurbanne, France
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- Peyre, H. (författare)
- Groupe d'Etude des Semiconducteurs, UMR 5650, CNRS, Université Montpellier 2, cc 074-GES, 34095 Montpellier Cedex 5, France
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- Juillaguet, S. (författare)
- Groupe d'Etude des Semiconducteurs, UMR 5650, CNRS, Université Montpellier 2, cc 074-GES, 34095 Montpellier Cedex 5, France
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- Souliere, V. (författare)
- Laboratoire des Multimateriaux et Interfaces, UMR 5615, CNRS, UCB-Lyon1, 43 Bd du 11 nov. 1918, 69622 Villeurbanne, France
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- Milesi, F. (författare)
- CEA-LETI/MINATEC, DPTS/SLIDE, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France
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- Ferro, G. (författare)
- Laboratoire des Multimateriaux et Interfaces, UMR 5615, CNRS, UCB-Lyon1, 43 Bd du 11 nov. 1918, 69622 Villeurbanne, France
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- Camassel, J. (författare)
- Groupe d'Etude des Semiconducteurs, UMR 5650, CNRS, Université Montpellier 2, cc 074-GES, 34095 Montpellier Cedex 5, France
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Groupe d'Etude des Semiconducteurs, UMR 5650, CNRS, Université Montpellier 2, cc 074-GES, 34095 Montpellier Cedex 5, France Laboratoire des Multimateriaux et Interfaces, UMR 5615, CNRS, UCB-Lyon1, 43 Bd du 11 nov 1918, 69622 Villeurbanne, France (creator_code:org_t)
- AIP Publishing, 2010
- 2010
- Engelska.
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 108:1, s. 013503-1-013503-10
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- We report on Ga-doped 3C–SiC epitaxial layers grown on on-axis (0001) 6H–SiC substrates using the vapor-liquid-solid technique and different melts. The resulting samples have been investigated using secondary ion mass spectroscopy(SIMS), micro-Raman spectroscopy and, finally, low temperature photoluminescence (LTPL) spectroscopy. From SIMS measurements we find Ga concentrations in the range of , systematically accompanied by high nitrogen content. In good agreement with these findings, the spectra show that the Ga-doped samples are -type, with electron concentrations close to . As expected, the LTPL spectra are dominated by strong N–Ga donor-acceptor pair (DAP) transitions. In one sample, a weak additional N–Al DAP recombination spectrum is also observed, showing the possibility to have accidental codoping with Ga and Al simultaneously. This was confirmed on a non-intentionally doped 3C–SiC (witness) sample on which, apart of the usual N and Al bound exciton lines, a small feature resolved at 2.35 eV comings from neutral Ga bound excitons. Quantitative analyses of the DAP transition energies in the Ga-doped and witness sample gave 346 meV for the optical binding energy of Ga acceptors in 3C–SiC against 251 meV for the Al one. The conditions for the relative observa-tion of Ga and Al related LTPL features are discussed and the demonstration of room temperature luminescence using Ga doping is done.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
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Sun, J. W.
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Zoulis, G.
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Lorenzzi, J. C.
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Jegenyes, N.
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Peyre, H.
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Juillaguet, S.
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visa fler...
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Souliere, V.
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Milesi, F.
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Ferro, G.
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Camassel, J.
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