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Effects of Nitrogen...
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Jansson, MattiasLinköpings universitet,Ytors Fysik och Kemi,Tekniska fakulteten,Funktionella elektroniska material
(author)
Effects of Nitrogen Incorporation on Structural and Optical Properties of GaNAsP Nanowires
- Article/chapterEnglish2017
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2017-03-17
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AMER CHEMICAL SOC,2017
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electronicrdacarrier
Numbers
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LIBRIS-ID:oai:DiVA.org:liu-136889
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-136889URI
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https://doi.org/10.1021/acs.jpcc.7b00985DOI
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Language:English
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Summary in:English
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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Funding Agencies|Swedish Energy Agency [P40119-1]; Swedish Research Council [2015-0.5532]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009 00971]; National Science Foundation [DMR-1106369]
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In this work, we carry out a comprehensive investigation of structural and optical effects in GaNAsP nanowires (NWs), which are novel materials promising for advanced photovoltaic applications. Despite a significant mismatch in electronegativity between N and As/P atoms, we show that incorporation of nitrogen does not degrade structural quality of the nanowires and the fabricated NW arrays have excellent compositional uniformity among individual wires. From temperature-dependent photoluminescence (PL) measurements, statistical fluctuations of the alloy composition are shown to lead to localization of photoexcited carriers at low temperatures but do not affect material properties at room temperature. According to time-resolved PL measurements, the room-temperature carrier lifetime increases in the GaNAsP NWs as compared with the GaAsP NWs, which indicates reduced nonradiative recombination. Moreover, in spite of the very low N content in the studied NWs (up to 0.16%), their bandgap energy can be tuned by more than 100 meV. This is accompanied by about 30% reduction in the temperature dependence of the bandgap energy. The presented results demonstrate that alloying of GaAsP with nitrogen provides an additional means of design optimization, beneficial for, e.g., NW-based intermediate band solar cells that are highly dependent on the optimum bandgap structure.
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Chen, ShulaLinköpings universitet,Ytors Fysik och Kemi,Tekniska fakulteten,Funktionella elektroniska material(Swepub:liu)shuch85
(author)
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La, RuiUniversity of Calif San Diego, CA 92093 USA
(author)
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Stehr, Jan EricLinköpings universitet,Ytors Fysik och Kemi,Tekniska fakulteten,Funktionella elektroniska material(Swepub:liu)janst95
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Tu, Charles W.University of Calif San Diego, CA 92093 USA; University of Calif San Diego, CA 92093 USA
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Chen, WeiminLinköpings universitet,Ytors Fysik och Kemi,Tekniska fakulteten,Funktionella elektroniska material(Swepub:liu)weich55
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Buyanova, IrinaLinköpings universitet,Ytors Fysik och Kemi,Tekniska fakulteten,Funktionella elektroniska material(Swepub:liu)iribo40
(author)
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Linköpings universitetYtors Fysik och Kemi
(creator_code:org_t)
Related titles
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In:The Journal of Physical Chemistry C: AMER CHEMICAL SOC121:12, s. 7047-70551932-74471932-7455
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