The operational mechanism of ferroelectric-driven organic resistive switches

• The availability of a reliable memory element is crucial for the fabrication of plastic logic circuits. We use numerical simulations to show that the switching mechanism of ferroelectric-driven organic resistive switches is the stray field of the polarized ferroelectric phase. The stray field modulates the charge injection from a metallic electrode into the organic semiconductor, switching the diode from injection limited to space charge limited. The modeling rationalizes the previously observed exponential dependence of the on/off ratio on injection barrier height. We find a lower limit of about 50 nm for the feature size that can be used in a crossbar array, translating into a rewritable memory with an information density of the order of 1 Gb/cm(2). (C) 2011 Elsevier B. V. All rights reserved.

Subject headings

NATURVETENSKAP  -- Fysik -- Annan fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Other Physics Topics (hsv//eng)

Keyword

Charge transport; Organic semiconductors; Ferroelectric nanostructures; Data storage; Thin films

Publication and Content Type

ref (subject category)

art (subject category)