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Design of composite...
Design of composite InAsP/InGaAs quantum wells for a 1.55 mu m polarization independent semiconductor optical amplifier
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- Haverkort, JEM (author)
- Eindhoven University of Technology, Netherlands
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- Dorren, BHP (author)
- Eindhoven University of Technology, Netherlands
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- Kemerink, Martijn (author)
- Eindhoven University of Technology, Netherlands
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- Silov, AY (author)
- Eindhoven University of Technology, Netherlands
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- Wolter, JH (author)
- Eindhoven University of Technology, Netherlands
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(creator_code:org_t)
- American Institute of Physics (AIP), 1999
- 1999
- English.
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In: Applied Physics Letters. - : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 75:18, s. 2782-2784
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
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- We investigate a composite InAsP/InGaAs quantum well in which an 8 nm tensile strained InGaAs well is surrounded by two compressively strained InAsP layers which feature a 70:30 conduction band offset ratio. The composite quantum well is found to provide a high TM differential gain. The InAsP layers provide strain compensation while simultaneously shifting the band gap to the relevant 1.55 mu m wavelength region and increasing the electron confinement. Composite InAsP/InGaAs quantum wells are a promising candidate for realizing a polarization independent semiconductor optical amplifier at 1.55 mu m. (C) 1999 American Institute of Physics. [S0003-6951(99)01944-0].
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Publication and Content Type
- ref (subject category)
- art (subject category)
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