Infrared Reflectance of Extremely Thin AlN Epi Films Deposited on SiC Substrates

• The room temperature reflectance of thin (£ 1000Å) AlN epi-films deposited on n type 6H SiC has been measure. These epi-films are too thin to produce interference fringes, from which epi-films thickness is often extracted, within the measured spectral region. However, features from the AlN reststrahl reflectance band can be clearly seen for AlN epi-films as thin as 250Å. Thicknesses are extracted from the measured spectra by comparing them directly to calculated spectra with the epi-film thickness being the only fitting parameter. The accuracy of these thickness determinations is confirmed by comparing them to thickness measured on samples studied by cross sectional TEM.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Annan teknik -- Övrig annan teknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Other Engineering and Technologies -- Other Engineering and Technologies not elsewhere specified (hsv//eng)

Keyword

Epi-film Thickness

Reflectance

TEM

Material physics with surface physics

Materialfysik med ytfysik

Publication and Content Type

ref (subject category)

kon (subject category)