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Silicon Carbide Sur...
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Jokubavicius, Valdas,1983-Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
(author)
Silicon Carbide Surface Cleaning and Etching
- Article/chapterEnglish2018
Publisher, publication year, extent ...
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2018-07-25
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Materials Research Forum LLC,2018
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printrdacarrier
Numbers
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LIBRIS-ID:oai:DiVA.org:liu-151048
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-151048URI
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https://doi.org/10.21741/9781945291852-1DOI
Supplementary language notes
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Language:English
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Summary in:English
Part of subdatabase
Classification
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Subject category:ref swepub-contenttype
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Subject category:kap swepub-publicationtype
Notes
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Silicon carbide (SiC) surface cleaning and etching (wet, electrochemical, thermal) are important technological processes in preparation of SiC wafers for crystal growth, defect analysis or device processing. While removal of organic, particulate and metallic contaminants by chemical cleaning is a routine process in research and industrial production, the etching which, in addition to structural defects analysis, can also be used to modify wafer surface structure, is very interesting for development of innovative device concepts. In this book chapter we review SiC chemical cleaning and etching procedures and present perspectives of SiC etching for new device development.
Subject headings and genre
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Silicon Carbide
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Chemical Cleaning
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Wet Etching
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Electrochemical Etching
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Porous SiC
Added entries (persons, corporate bodies, meetings, titles ...)
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Syväjärvi, Mikael,1968-Linköpings universitet,Halvledarmaterial,Tekniska fakulteten(Swepub:liu)miksy08
(author)
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Yakimova, Rositsa,1942-Linköpings universitet,Halvledarmaterial,Tekniska fakulteten(Swepub:liu)rosia15
(author)
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Linköpings universitetHalvledarmaterial
(creator_code:org_t)
Related titles
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In:Advancing Silicon Carbide Electronics Technology I: Materials Research Forum LLC, s. 1-2697819452918459781945291852
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