Smooth 4H-SiC epilayers grown with high growth rates with silane/propane chemistry using 4° off-cut substrates

• 4H-SiC epilayers with very smooth surfaces were grown with high growth rates on 4° off-cut substrates using standard silane/propane chemistry. Specular surfaces with RMS values below 0.2 nm are presented for epilayers grown with growth rates up to 30 μm/h using horizontal hot-wall chemical vapor deposition, with up to 100 μm thickness. Optimization of in-situ etching conditions and C/Si ratio are presented.

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Materialteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Materials Engineering (hsv//eng)

Keyword

Atomic force microscopy

Chemical vapor deposition

Epitaxial growth

Silicon carbide

Publication and Content Type

ref (subject category)

kon (subject category)