WFRF:(Ivády Viktor)
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- Davidsson, JoelLinköpings universitet,Teoretisk Fysik,Tekniska fakulteten (author)
Identification of divacancy and silicon vacancy qubits in 6H-SiC
- Article/chapterEnglish2019
Publisher, publication year, extent ...
- AMER INST PHYSICS,2019
- electronicrdacarrier
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- LIBRIS-ID:oai:DiVA.org:liu-156202
- https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-156202URI
- https://doi.org/10.1063/1.5083031DOI
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- Language:English
- Summary in:English
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- Funding Agencies|Swedish e-Science Centre (SeRC); Swedish Government Strategic Research Areas in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009-00971]; Swedish Research Council (VR) [2016-04068, 2016-04810]; Centre in Nano Science and Nanotechnology (CeNano); Carl Trygger Stiftelse for Vetenskaplig Forskning [CTS 15: 339]; JSPS KAKENHI [A 17H01056, 18H03770]; Ministry of Science and High Education of the Russian Federation [K2-2019-001, 211]; MTA Premium Postdoctoral Research Program; National Research Development and Innovation Office of Hungary (NKFIH) within the Quantum Technology National Excellence Program [2017-1.2.1-NKP-2017-00001]; National Research Development and Innovation Office of Hungary (NKFIH) within NVKP Program [NVKP 16-1-20160043]; National Research Development and Innovation Office of Hungary (NKFIH) within Excellent Researcher Program [KKP129886]; EU QuantERA Nanospin (NKFIH) [127902]
- Point defects in semiconductors are relevant for use in quantum technologies as room temperature qubits and single photon emitters. Among suggested defects for these applications are the negatively charged silicon vacancy and the neutral divacancy in SiC. The possible nonequivalent configurations of these defects have been identified in 4H-SiC, but for 6H-SiC, the work is still in progress. In this paper, we identify the different configurations of the silicon vacancy and the divacancy defects to each of the V1-V3 and the QL1-QL6 color centers in 6H-SiC, respectively. We accomplish this by comparing the results from ab initio calculations with experimental measurements for the zero-phonon line, hyperfine tensor, and zero-field splitting. Published under license by AIP Publishing.
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- Ivády, ViktorLinköpings universitet,Teoretisk Fysik,Tekniska fakulteten,Hungarian Acad Sci, Hungary(Swepub:liu)vikiv58 (author)
- Armiento, RickardLinköpings universitet,Teoretisk Fysik,Tekniska fakulteten(Swepub:liu)ricar47 (author)
- Ohshima, TakeshiNatl Inst Quantum and Radiol Sci and Technol, Japan (author)
- Nguyen, Son TienLinköpings universitet,Halvledarmaterial,Tekniska fakulteten(Swepub:liu)nguso90 (author)
- Gali, AdamHungarian Acad Sci, Hungary; Budapest Univ Technol and Econ, Hungary (author)
- Abrikosov, IgorLinköpings universitet,Teoretisk Fysik,Tekniska fakulteten,Natl Univ Sci and Technol MISIS, Russia(Swepub:liu)igoab43 (author)
- Linköpings universitetTeoretisk Fysik (creator_code:org_t)
Related titles
- In:Applied Physics Letters: AMER INST PHYSICS114:110003-69511077-3118
Internet link
- http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-165974Link to correction
- https://liu.diva-portal.org/smash/get/diva2:1303228/FULLTEXT01.pdffulltext:postprint
- http://liu.diva-portal.org/smash/get/diva2:1303228/FULLTEXT01
- https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-156202
- https://doi.org/10.1063/1.5083031
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