Search: WFRF:(Yazdi Gholamreza 1966 )
> (2015-2019) >
A comparative study...
A comparative study of high-quality C-face and Si-face 3C-SiC(1 1 1) grown on off-oriented 4H-SiC substrates
-
- Shi, Yuchen (author)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
-
- Jokubavicius, Valdas, 1983- (author)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
-
- Höjer, Pontus, 1993- (author)
- Linköpings universitet,Biomolekylär och Organisk Elektronik,Tekniska fakulteten
-
show more...
-
- Ivanov, Ivan Gueorguiev, 1955- (author)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
-
- Yazdi, Gholamreza, 1966- (author)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
-
- Yakimova, Rositsa, 1942- (author)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
-
- Syväjärvi, Mikael, 1968- (author)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
-
- Sun, Jianwu W., 1980- (author)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
-
show less...
-
(creator_code:org_t)
- 2019-07-01
- 2019
- English.
-
In: Journal of Physics D. - : Biopress Ltd. - 0022-3727 .- 1361-6463. ; 52:34
- Related links:
-
https://doi.org/10.1...
-
show more...
-
https://liu.diva-por... (primary) (Raw object)
-
https://doi.org/10.1...
-
https://urn.kb.se/re...
-
https://doi.org/10.1...
-
show less...
Abstract
Subject headings
Close
- We present a comparative study of the C-face and Si-face of 3C-SiC(111) grown on off-oriented 4H-SiC substrates by the sublimation epitaxy. By the lateral enlargement method, we demonstrate that the high-quality bulk-like C-face 3C-SiC with thickness of ~1 mm can be grown over a large single domain without double positioning boundaries (DPBs), which are known to have a strongly negative impact on the electronic properties of the material. Moreover, the C-face sample exhibits a smoother surface with one unit cell height steps while the surface of the Si-face sample exhibits steps twice as high as on the C-face due to step-bunching. High-resolution XRD and low temperature photoluminescence measurements show that C-face 3C-SiC can reach the same high crystalline quality as the Si-face 3C-SiC. Furthermore, cross-section studies of the C- and Si-face 3C-SiC demonstrate that in both cases an initial homoepitaxial 4H-SiC layer followed by a polytype transition layer are formed prior to the formation and lateral expansion of 3C-SiC layer. However, the transition layer in the C-face sample is extending along the step-flow direction less than that on the Si-face sample, giving rise to a more fairly consistent crystalline quality 3C-SiC epilayer over the whole sample compared to the Si-face 3C-SiC where more defects appeared on the surface at the edge. This facilitates the lateral enlargement of 3C-SiC growth on hexagonal SiC substrates.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Publication and Content Type
- ref (subject category)
- art (subject category)
Find in a library
To the university's database
- By the author/editor
-
Shi, Yuchen
-
Jokubavicius, Va ...
-
Höjer, Pontus, 1 ...
-
Ivanov, Ivan Gue ...
-
Yazdi, Gholamrez ...
-
Yakimova, Rosits ...
-
show more...
-
Syväjärvi, Mikae ...
-
Sun, Jianwu W., ...
-
show less...
- About the subject
-
- NATURAL SCIENCES
-
NATURAL SCIENCES
-
and Physical Science ...
-
and Condensed Matter ...
- Articles in the publication
-
Journal of Physi ...
- By the university
-
Linköping University