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  • Shi, YuchenLinköpings universitet,Halvledarmaterial,Tekniska fakulteten (author)

A comparative study of high-quality C-face and Si-face 3C-SiC(1 1 1) grown on off-oriented 4H-SiC substrates

  • Article/chapterEnglish2019

Publisher, publication year, extent ...

  • 2019-07-01
  • Biopress Ltd,2019
  • electronicrdacarrier

Numbers

  • LIBRIS-ID:oai:DiVA.org:liu-159101
  • https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-159101URI
  • https://doi.org/10.1088/1361-6463/ab2859DOI

Supplementary language notes

  • Language:English
  • Summary in:English

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  • Subject category:ref swepub-contenttype
  • Subject category:art swepub-publicationtype

Notes

  • Funding agencies:  Swedish Research Council (Vetenskapsradet) [621-2014-5461, 2018-04670, 2016-05362, 621-2014-5825]; Swedish Research Council for Environment, Agricultural Sciences and Spatial Planning (FORMAS) [2016-00559]; Swedish Foundation for International Cooperation
  • We present a comparative study of the C-face and Si-face of 3C-SiC(111) grown on off-oriented 4H-SiC substrates by the sublimation epitaxy. By the lateral enlargement method, we demonstrate that the high-quality bulk-like C-face 3C-SiC with thickness of ~1 mm can be grown over a large single domain without double positioning boundaries (DPBs), which are known to have a strongly negative impact on the electronic properties of the material. Moreover, the C-face sample exhibits a smoother surface with one unit cell height steps while the surface of the Si-face sample exhibits steps twice as high as on the C-face due to step-bunching. High-resolution XRD and low temperature photoluminescence measurements show that C-face 3C-SiC can reach the same high crystalline quality as the Si-face 3C-SiC. Furthermore, cross-section studies of the C- and Si-face 3C-SiC demonstrate that in both cases an initial homoepitaxial 4H-SiC layer followed by a polytype transition layer are formed prior to the formation and lateral expansion of 3C-SiC layer. However, the transition layer in the C-face sample is extending along the step-flow direction less than that on the Si-face sample, giving rise to a more fairly consistent crystalline quality 3C-SiC epilayer over the whole sample compared to the Si-face 3C-SiC where more defects appeared on the surface at the edge. This facilitates the lateral enlargement of 3C-SiC growth on hexagonal SiC substrates.

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Added entries (persons, corporate bodies, meetings, titles ...)

  • Jokubavicius, Valdas,1983-Linköpings universitet,Halvledarmaterial,Tekniska fakulteten(Swepub:liu)valjo12 (author)
  • Höjer, Pontus,1993-Linköpings universitet,Biomolekylär och Organisk Elektronik,Tekniska fakulteten(Swepub:liu)ponho68 (author)
  • Ivanov, Ivan Gueorguiev,1955-Linköpings universitet,Halvledarmaterial,Tekniska fakulteten(Swepub:liu)ivaiv28 (author)
  • Yazdi, Gholamreza,1966-Linköpings universitet,Halvledarmaterial,Tekniska fakulteten(Swepub:liu)ghoya53 (author)
  • Yakimova, Rositsa,1942-Linköpings universitet,Halvledarmaterial,Tekniska fakulteten(Swepub:liu)rosia15 (author)
  • Syväjärvi, Mikael,1968-Linköpings universitet,Halvledarmaterial,Tekniska fakulteten(Swepub:liu)miksy08 (author)
  • Sun, Jianwu W.,1980-Linköpings universitet,Halvledarmaterial,Tekniska fakulteten(Swepub:liu)jiasu75 (author)
  • Linköpings universitetHalvledarmaterial (creator_code:org_t)

Related titles

  • In:Journal of Physics D: Biopress Ltd52:340022-37271361-6463

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