Measurement of Carrier Lifetime Temperature Dependence in 3.3kV 4H-SiC PiN Diodes Using OCVD Technique

• This paper reports on the influence of temperature on the electrical carrier lifetime of a 3.3 kV 4H-SiC PiN diode processed with a new generation of SiC material. The Open Circuit Voltage Decay (OCVD) is used to evaluate ambipolar lifetime evolution versus temperature. The paper presents a description of the setup, electrical measurements and extraction fittings. The ambipolar lifetime is found to rise from 600 ns at 30 °C to 3.5 μs at 150 °C.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

Open Circuit Voltage Decay

Carrier Lifetime Temperature-Dependence

Bipolar Diode

OCVD

Publikations- och innehållstyp

ref (ämneskategori)

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