Recent progress in silicon carbide field effect gas sensors

• The introduction of silicon carbide as the semiconductor in gas-sensitive field effect devices has disruptively improved this sensor platform extending the operation temperature to more than 600 °C with an increased number of detectable gases. Here, we review recent progress in research and applications, starting with transducer and detection mechanisms, presenting new material combinations as sensing layers for improved selectivity and detection limits down to subparts per billion. We describe how temperature cycled operation combined with advanced data evaluation enables one sensor to act as a sensor array thereby vastly improving selectivity. Field tests require advanced packaging, which is described, and examples of possible applications like selective detection of ammonia for urea injection control in diesel exhausts and toxic volatile organic compounds for indoor air quality monitoring and control are given.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Kemiteknik -- Annan kemiteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Chemical Engineering -- Other Chemical Engineering (hsv//eng)

Nyckelord

Gas sensors

field-effect gas sensors

semiconductor gas sensors

VOC

harsh environment

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