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  • Lu, JunLinköpings universitet,Tunnfilmsfysik,Tekniska fakulteten (author)

Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors

  • Article/chapterEnglish2019

Publisher, publication year, extent ...

  • AMER INST PHYSICS,2019
  • electronicrdacarrier

Numbers

  • LIBRIS-ID:oai:DiVA.org:liu-163045
  • https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-163045URI
  • https://doi.org/10.1063/1.5123374DOI

Supplementary language notes

  • Language:English
  • Summary in:English

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  • Subject category:ref swepub-contenttype
  • Subject category:art swepub-publicationtype

Notes

  • Funding Agencies|Knut and Alice Wallenberg Foundation Scholar Grant [KAW-2016-0358]; European UnionEuropean Union (EU) [823260]; KAW foundation; Swedish Foundation for Strategic ResearchSwedish Foundation for Strategic Research [EM16-0004]
  • Interfaces containing misfit dislocations deteriorate electronic properties of heteroepitaxial wide bandgap III-nitride semiconductors grown on foreign substrates, as a result of lattice and thermal expansion mismatches and incompatible chemical bonding. We report grain-boundary-free AlN nucleation layers (NLs) grown by metalorganic chemical vapor deposition on SiC (0001) substrates mediated by an interface extending over two atomic layers L1 and L2 with composition (Al1/3Si2/3)(2/3)N and (Al2/3Si1/3)N, respectively. It is remarkable that the interfaces have ordered vacancies on one-third of the Al/Si position in L1, as shown here by analytical scanning transmission electron microscopy and ab initio calculations. This unique interface is coined the out-of-plane compositional-gradient with in-plane vacancy-ordering and can perfectly transform the in-plane lattice atomic configuration from the SiC substrate to the AlN NL within 1 nm thick transition. This transmorphic epitaxial scheme enables a critical breakdown field of similar to 2 MV/cm achieved in thin GaN-based transistor heterostructures grown on top. Lateral breakdown voltages of 900 V and 1800 V are demonstrated at contact distances of 5 and 20 mu m, respectively, and the vertical breakdown voltage is amp;gt;= 3 kV. These results suggest that the transmorphic epitaxially grown AlN layer on SiC may become the next paradigm for GaN power electronics. (C) 2019 Author(s).

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Added entries (persons, corporate bodies, meetings, titles ...)

  • Chen, Jr-TaiSweGaN AB, Teknikringen 8D, SE-58330 Linkoping, Sweden (author)
  • Dahlqvist, Martin,1982-Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten(Swepub:liu)marda09 (author)
  • Kabouche, RiadInst Elect Microelect and Nanotechnol, France (author)
  • Medjdoub, FaridInst Elect Microelect and Nanotechnol, France (author)
  • Rosén, JohannaLinköpings universitet,Tunnfilmsfysik,Tekniska fakulteten(Swepub:liu)johro07 (author)
  • Kordina, OlofSweGaN AB, Teknikringen 8D, SE-58330 Linkoping, Sweden (author)
  • Hultman, LarsLinköpings universitet,Tunnfilmsfysik,Tekniska fakulteten(Swepub:liu)larhu75 (author)
  • Linköpings universitetTunnfilmsfysik (creator_code:org_t)

Related titles

  • In:Applied Physics Letters: AMER INST PHYSICS115:220003-69511077-3118

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