WFRF:(Zhang Yucheng)
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- Liu, JinghuangXidian Univ, Peoples R China (author)
Effect of iodine doping on photoelectric properties of perovskite-based MOS devices
- Article/chapterEnglish2020
Publisher, publication year, extent ...
- ELSEVIER,2020
- printrdacarrier
Numbers
- LIBRIS-ID:oai:DiVA.org:liu-163218
- https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-163218URI
- https://doi.org/10.1016/j.matlet.2019.127040DOI
Supplementary language notes
- Language:English
- Summary in:English
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- SwePubSwePub
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- Funding Agencies|National Natural Science Foundation of ChinaNational Natural Science Foundation of China [61704125, 61874084, 61974119, 51711530035]; Fundamental Research Funds for the Central UniversitiesFundamental Research Funds for the Central Universities [XJS17059, JBX171105]; Innovation Fund of Xidian Universities; Swedish Foundation for International Cooperation in Research and Higher Education (STINT) [CH2016-6722]; China Scholarship CouncilChina Scholarship Council
- In this article, the PVK based metal-oxide-semiconductor (MOS) capacitor structures were fabricated and the photoelectric performance of the capacitor was carried out to study the intrinsic electrical characteristic of PVK with iodine doped. The electrical hysteresis of the capacitor after iodine doping becomes larger in the dark state, which indicates that the hysteresis behavior of the PVK is caused by the mobile iodine ions. The photocurrent of iodine-doped PVK is significantly greater than that of undoped PVK under illumination, which suggests that the capacitor has better response to light and the photodetectors efficiency also increase after iodine doping. Our results provide a theoretical basis for the potential application of memory devices such as memristors under dark. Meanwhile, it provides a method to improve photodetector performance by adding an appropriate amount of iodine to the PVK precursor solution. (C) 2019 Elsevier B.V. All rights reserved.
Subject headings and genre
- TEKNIK OCH TEKNOLOGIER Kemiteknik Annan kemiteknik hsv//swe
- ENGINEERING AND TECHNOLOGY Chemical Engineering Other Chemical Engineering hsv//eng
- Perovskite; Metal-oxide-semiconductor (MOS) capacitor; Iodine-doped; Hysteresis
Added entries (persons, corporate bodies, meetings, titles ...)
- Pang, TiqiangLinköpings universitet,Biomolekylär och Organisk Elektronik,Tekniska fakulteten(Swepub:liu)tiapa90 (author)
- Wang, YuchengNorthwestern Polytech Univ, Peoples R China (author)
- Du, YongqiXidian Univ, Peoples R China (author)
- Zhang, YumingXidian Univ, Peoples R China (author)
- Jia, RenxuXidian Univ, Peoples R China (author)
- Xidian Univ, Peoples R ChinaBiomolekylär och Organisk Elektronik (creator_code:org_t)
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- In:Materials letters (General ed.): ELSEVIER2610167-577X1873-4979
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