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Heavily n-doped Ge:...
Heavily n-doped Ge: Low-temperature magnetoresistance properties on the metallic side of the metal-nonmetal transition
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- da Silva, A. Ferreira (författare)
- Univ Fed Bahia, Brazil; Univ Sao Paulo, Brazil
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- Toloza Sandoval, M. A. (författare)
- Univ Fed Bahia, Brazil
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- Levine, A. (författare)
- Univ Sao Paulo, Brazil
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- Levinson, E. (författare)
- Univ Sao Paulo, Brazil
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- Boudinov, H. (författare)
- Univ Fed Rio Grande do Sul, Brazil
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- Sernelius, Bo (författare)
- Linköpings universitet,Teoretisk Fysik,Tekniska fakulteten
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(creator_code:org_t)
- AMER INST PHYSICS, 2020
- 2020
- Engelska.
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Ingår i: Journal of Applied Physics. - : AMER INST PHYSICS. - 0021-8979 .- 1089-7550. ; 127:4
- Relaterad länk:
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https://liu.diva-por... (primary) (Raw object)
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http://arxiv.org/pdf...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
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- We report here an experimental and theoretical study on the magnetoresistance properties of heavily phosphorous doped germanium on the metallic side of the metal-nonmetal transition. An anomalous regime, formed by negative values of the magnetoresistance, was observed by performing low-temperature measurements and explained within the generalized Drude model, due to the many-body effects. It reveals a key mechanism behind the magnetoresistance properties at low temperatures and, therefore, constitutes a path to its manipulation in such materials of great interest in fundamental physics and technological applications. Published under license by AIP Publishing.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
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