Outermost AlGaO(x)native oxide as a protection layer for GaAs/AlGaAs core-multishell nanowires

• We propose native oxide AlGaO(x)outer protective layer for GaAs/AlGaAs core-multishell nanowires to provide yearly stable stronger optical and electrical confinement within the nanowire core. We prepared core-multishell NWs consisting of GaAs core, Al0.2Ga0.8As multi-layered barrier layer, and amorphous Al(0.9)Ga(0.1)O(x)outer shell, which was obtained simply by growing Al-rich AlGaAs and exposing the NWs to the ambient air. Photoluminescence from the NWs reveals that the Al(0.9)Ga(0.1)O(x)outer shell provides efficient optical confinement and creates a compressive strain in the interior of the NW that enhances and blueshifts the photoluminescence of the GaAs core.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

Nanowire; Si; GaAs; Oxide; passivation; Luminescence; Epitaxy

Publication and Content Type

ref (subject category)

art (subject category)