Direct epitaxial nanometer-thin InN of high structural quality on 4H-SiC by atomic layer deposition

• Indium nitride (InN) is a highly promising material for high frequency electronics given its low bandgap and high electron mobility. The development of InN-based devices is hampered by the limitations in depositing very thin InN films of high quality. We demonstrate growth of high-structural-quality nanometer thin InN films on 4H-SiC by atomic layer deposition (ALD). High resolution x-ray diffraction and transmission electron microscopy show epitaxial growth and an atomically sharp interface between InN and 4H-SiC. The InN film is fully relaxed already after a few atomic layers and shows a very smooth morphology where the low surface roughness (0.14nm) is found to reproduce sub-nanometer surface features of the substrate. Raman measurements show an asymmetric broadening caused by grains in the InN film. Our results show the potential of ALD to prepare high-quality nanometer-thin InN films for subsequent formation of heterojunctions.

Ämnesord

NATURVETENSKAP  -- Kemi -- Materialkemi (hsv//swe)

NATURAL SCIENCES  -- Chemical Sciences -- Materials Chemistry (hsv//eng)

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