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Anisotropic dielect...
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Hilfiker, MatthewUniv Nebraska, NE 68588 USA
(författare)
Anisotropic dielectric functions, band-to-band transitions, and critical points in alpha-Ga2O3
- Artikel/kapitelEngelska2021
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AMER INST PHYSICS,2021
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LIBRIS-ID:oai:DiVA.org:liu-174662
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-174662URI
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https://doi.org/10.1063/5.0031424DOI
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Språk:engelska
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Sammanfattning på:engelska
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Funding Agencies|National Science FoundationNational Science Foundation (NSF) [DMR 1808715]; ACCESS, an AFOSR Center of Excellence [FA9550-18-1-0529]; Air Force Office of Scientific ResearchUnited States Department of DefenseAir Force Office of Scientific Research (AFOSR) [FA9550-18-1-0360]; Nebraska Materials Research Science and Engineering Center [DMR 1420645]; Swedish Knut and Alice Wallenbergs Foundation; American Chemical Society/Petrol Research Fund; University of Nebraska Foundation; J. A. Woollam Foundation; JSPSMinistry of Education, Culture, Sports, Science and Technology, Japan (MEXT)Japan Society for the Promotion of Science [1080033]; Nebraska Research Initiative
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We use a combined generalized spectroscopic ellipsometry and density functional theory approach to determine and analyze the anisotropic dielectric functions of an alpha -Ga2O3 thin film. The sample is grown epitaxially by plasma-assisted molecular beam epitaxy on m-plane sapphire. Generalized spectroscopic ellipsometry data from multiple sample azimuths in the spectral range from 0.73eV to 8.75eV are simultaneously analyzed. Density functional theory is used to calculate the valence and conduction band structure. We identify, for the indirect-bandgap material, two direct band-to-band transitions with M-0-type van Hove singularities for polarization perpendicular to the c axis, E 0 , perpendicular to = 5.46 ( 6 ) eV and E 0 , perpendicular to = 6.04 ( 1 ) eV, and one direct band-to-band transition with M-1-type van Hove singularity for polarization parallel to E 0 , | | = 5.44 ( 2 ) eV. We further identify excitonic contributions with a small binding energy of 7meV associated with the lowest ordinary transition and a hyperbolic exciton at the M-1-type critical point with a large binding energy of 178meV.
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Biuppslag (personer, institutioner, konferenser, titlar ...)
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Korlacki, RafalUniv Nebraska, NE 68588 USA
(författare)
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Jinno, RienaCornell Univ, NY 14853 USA; Kyoto Univ, Japan
(författare)
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Cho, YongjinCornell Univ, NY 14853 USA
(författare)
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Xing, Huili GraceCornell Univ, NY 14853 USA
(författare)
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Jena, DebdeepCornell Univ, NY 14853 USA
(författare)
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Kilic, UfukUniv Nebraska, NE 68588 USA
(författare)
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Stokey, MeganUniv Nebraska, NE 68588 USA
(författare)
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Schubert, MathiasLinköpings universitet,Halvledarmaterial,Tekniska fakulteten,Univ Nebraska, NE 68588 USA; Leibniz Inst Polymerforsch eV, Germany(Swepub:liu)schma39
(författare)
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Univ Nebraska, NE 68588 USACornell Univ, NY 14853 USA; Kyoto Univ, Japan
(creator_code:org_t)
Sammanhörande titlar
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Ingår i:Applied Physics Letters: AMER INST PHYSICS118:60003-69511077-3118
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