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Electronic structure of buried Si layers in GaAs(001) as studied by soft-x-ray emission

Nilsson, P. O. (author)
Chalmers University
Kanski, J. (author)
Chalmers University
Thordson, J. V. (author)
Chalmers University
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Andersson, T. G. (author)
Chalmers University
Nordgren, J. (author)
Uppsala universitet,Fysiska institutionen,Uppsala University
Guo, J. (author)
Uppsala University
Magnuson, Martin (author)
Uppsala universitet,Fysiska institutionen,Uppsala University
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 (creator_code:org_t)
1995
1995
English.
In: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 52, s. R8643-
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • It is demonstrated that it is possible to investigate details of the electronic structure of an internal atomic monolayer using soft-x-ray-emission spectroscopy. The local and partial density of states of one monolayer and three monolayers of Si, embedded deep below a GaAs(001) surface, was extracted. Clear differences to the density of states for bulk Si were observed.

Subject headings

NATURVETENSKAP  -- Biologi (hsv//swe)
NATURAL SCIENCES  -- Biological Sciences (hsv//eng)
NATURVETENSKAP  -- Fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

Keyword

NATURAL SCIENCES
NATURVETENSKAP
Biology
Biologi
SPECTROSCOPY; DENSITIES; SPECTRA; STATES; GAAS

Publication and Content Type

ref (subject category)
art (subject category)

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