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Realization of an I...
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Bykov, MaximHoward Univ, DC 20059 USA; Carnegie Inst Sci, DC 20015 USA
(författare)
Realization of an Ideal Cairo Tessellation in Nickel Diazenide NiN2: High-Pressure Route to Pentagonal 2D Materials
- Artikel/kapitelEngelska2021
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2021-08-06
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AMER CHEMICAL SOC,2021
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electronicrdacarrier
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LIBRIS-ID:oai:DiVA.org:liu-179447
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-179447URI
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https://doi.org/10.1021/acsnano.1c04325DOI
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Språk:engelska
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Sammanfattning på:engelska
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Ämneskategori:art swepub-publicationtype
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Funding Agencies|Army Research Office; Russian Science FoundationRussian Science Foundation (RSF) [18-12-00492]; Ministry of Science and Higher Education of the Russian Federation [K22020-026, 211]; Knut and Alice Wallenberg FoundationKnut & Alice Wallenberg Foundation [KAW-2018.0194]; Swedish Government Strategic Research Areas in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009 00971]; SeRC, the Swedish Research Council (VR) [2019-05600]; Vinnova VINN Excellence Center Functional Nanoscale Materials (FunMat-2) Grant [201605156]; Swedish Research CouncilSwedish Research CouncilEuropean Commission [2016-07213]; National Science Foundation.Earth SciencesNational Science Foundation (NSF) [EAR.1634415]; Department of Energy-GeosciencesUnited States Department of Energy (DOE) [DE-FG0294ER14466]; DOENNSAs Office of Experimental Sciences; DOE Office of ScienceUnited States Department of Energy (DOE) [DEAC02-06CH11357]; [W911NF-192-0172]
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Most of the studied two-dimensional (2D) materials are based on highly symmetric hexagonal structural motifs. In contrast, lower-symmetry structures may have exciting anisotropic properties leading to various applications in nano-electronics. In this work we report the synthesis of nickel diazenide NiN2 which possesses atomic-thick layers comprised of Ni2N3 pentagons forming Cairo-type tessellation. The layers of NiN2 are weakly bonded with the calculated exfoliation energy of 0.72 J/m(2), which is just slightly larger than that of graphene. The compound crystallizes in the space group of the ideal Cairo tiling (P4/mbm) and possesses significant anisotropy of elastic properties. The single-layer NiN2 is a direct-band-gap semiconductor, while the bulk material is metallic. This indicates the promise of NiN2 to be a precursor of a pentagonal 2D material with a tunable direct band gap.
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Biuppslag (personer, institutioner, konferenser, titlar ...)
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Bykova, ElenaHoward Univ, DC 20059 USA
(författare)
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Ponomareva, Alena VNatl Univ Sci & Technol MISIS, Russia
(författare)
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Tasnadi, FerencLinköpings universitet,Teoretisk Fysik,Tekniska fakulteten(Swepub:liu)ferta55
(författare)
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Chariton, StellaUniv Chicago, IL 60637 USA
(författare)
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Prakapenka, Vitali B.Univ Chicago, IL 60637 USA
(författare)
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Glazyrin, KonstantinDeutsch Electronen Synchrotron DESY, Germany
(författare)
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Smith, Jesse S.Argonne Natl Lab, IL 60439 USA
(författare)
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Mahmood, Mohammad F.Howard Univ, DC 20059 USA
(författare)
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Abrikosov, IgorLinköpings universitet,Teoretisk Fysik,Tekniska fakulteten(Swepub:liu)igoab43
(författare)
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Goncharov, Alexander F.Carnegie Inst Sci, DC 20015 USA
(författare)
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Howard Univ, DC 20059 USA; Carnegie Inst Sci, DC 20015 USAHoward Univ, DC 20059 USA
(creator_code:org_t)
Sammanhörande titlar
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Ingår i:ACS Nano: AMER CHEMICAL SOC15:8, s. 13539-135461936-08511936-086X
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Bykov, Maxim
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Bykova, Elena
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Ponomareva, Alen ...
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Tasnadi, Ferenc
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Chariton, Stella
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Prakapenka, Vita ...
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Glazyrin, Konsta ...
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Smith, Jesse S.
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Mahmood, Mohamma ...
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Abrikosov, Igor
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Goncharov, Alexa ...
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