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Transition metal-ca...
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Guo, HanSouthern Univ Sci & Technol SUSTech, Peoples R China
(author)
Transition metal-catalysed molecular n-doping of organic semiconductors
- Article/chapterEnglish2021
Publisher, publication year, extent ...
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2021-11-03
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London, United Kingdom :Nature Publishing Group,2021
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Numbers
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LIBRIS-ID:oai:DiVA.org:liu-181033
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-181033URI
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https://doi.org/10.1038/s41586-021-03942-0DOI
Supplementary language notes
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Language:English
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Summary in:English
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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Electron doping of organic semiconductors is typically inefficient, but here a precursor molecular dopant is used to deliver higher n-doping efficiency in a much shorter doping time. Chemical doping is a key process for investigating charge transport in organic semiconductors and improving certain (opto)electronic devices(1-9). N(electron)-doping is fundamentally more challenging than p(hole)-doping and typically achieves a very low doping efficiency (eta) of less than 10%(1,10). An efficient molecular n-dopant should simultaneously exhibit a high reducing power and air stability for broad applicability(1,5,6,9,11), which is very challenging. Here we show a general concept of catalysed n-doping of organic semiconductors using air-stable precursor-type molecular dopants. Incorporation of a transition metal (for example, Pt, Au, Pd) as vapour-deposited nanoparticles or solution-processable organometallic complexes (for example, Pd-2(dba)(3)) catalyses the reaction, as assessed by experimental and theoretical evidence, enabling greatly increased eta in a much shorter doping time and high electrical conductivities (above 100 S cm(-1); ref. (12)). This methodology has technological implications for realizing improved semiconductor devices and offers a broad exploration space of ternary systems comprising catalysts, molecular dopants and semiconductors, thus opening new opportunities in n-doping research and applications(12, 13).
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Yang, ChiyuanLinköpings universitet,Laboratoriet för organisk elektronik,Tekniska fakulteten(Swepub:liu)chiya01
(author)
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Zhang, XianheSouthern Univ Sci & Technol SUSTech, Peoples R China
(author)
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Motta, AlessandroUniv Roma La Sapienza, Italy; UdR Roma, Italy
(author)
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Feng, KuiSouthern Univ Sci & Technol SUSTech, Peoples R China
(author)
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Xia, YuFlexterra Corp, IL 60077 USA
(author)
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Shi, YongqiangSouthern Univ Sci & Technol SUSTech, Peoples R China
(author)
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Wu, ZiangDepartment of Chemistry, Korea University, Seoul, South Korea
(author)
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Yang, KunSouthern Univ Sci & Technol SUSTech, Peoples R China
(author)
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Chen, JianhuaSouthern Univ Sci & Technol SUSTech, Peoples R China
(author)
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Liao, QiaoganSouthern Univ Sci & Technol SUSTech, Peoples R China
(author)
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Tang, YuminSouthern Univ Sci & Technol SUSTech, Peoples R China
(author)
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Sun, HuiliangSouthern Univ Sci & Technol SUSTech, Peoples R China
(author)
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Woo, Han YoungKorea Univ, South Korea
(author)
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Fabiano, Simone,1985-Linköpings universitet,Laboratoriet för organisk elektronik,Tekniska fakulteten(Swepub:liu)simfa84
(author)
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Facchetti, AntonioLinköpings universitet,Laboratoriet för organisk elektronik,Tekniska fakulteten,Flexterra Corp, IL 60077 USA; Northwestern Univ, IL 60208 USA; Northwestern Univ, IL 60208 USA(Swepub:liu)antfa16
(author)
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Guo, XugangSouthern Univ Sci & Technol SUSTech, Peoples R China
(author)
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Southern Univ Sci & Technol SUSTech, Peoples R ChinaLaboratoriet för organisk elektronik
(creator_code:org_t)
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In:NatureLondon, United Kingdom : Nature Publishing Group599:7883, s. 67-730028-08361476-4687
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Guo, Han
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Yang, Chiyuan
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Shi, Yongqiang
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