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  • Spencer, Joseph A.Virginia Polytech Inst & State Univ, VA 24060 USA; US Naval Res Lab, DC 20375 USA (author)

A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and Sc2O3

  • Article/chapterEnglish2022

Publisher, publication year, extent ...

  • AIP Publishing,2022
  • printrdacarrier

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  • LIBRIS-ID:oai:DiVA.org:liu-184847
  • https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-184847URI
  • https://doi.org/10.1063/5.0078037DOI

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  • Language:English
  • Summary in:English

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  • Subject category:ref swepub-contenttype
  • Subject category:for swepub-publicationtype

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  • Funding Agencies|Naval Research Enterprise Internship Program (NREIP), Office of Naval Research; Jeffress Trust Awards Program in Interdisciplinary Research by Thomas F. and Kate Miller Jeffress Memorial Trust; Center for Power Electronics Systems High Density Integration (HDI) Industry Consortium at Virginia Tech; National Research Council; Office of Naval ResearchOffice of Naval Research; National Science Foundation (NSF)National Science Foundation (NSF)National Research Foundation of Korea [NSF DMR 1808715, OIA-2044049]; Air Force Office of Scientific ResearchUnited States Department of DefenseAir Force Office of Scientific Research (AFOSR) [FA9550-18-1-0360, FA9550-19-S-0003, FA9550-21-1-0259]; Knut and Alice Wallenbergs FoundationKnut & Alice Wallenberg Foundation; University of Nebraska Foundation; J. A. Woollam Foundation
  • This Review highlights basic and transition metal conducting and semiconducting oxides. We discuss their material and electronic properties with an emphasis on the crystal, electronic, and band structures. The goal of this Review is to present a current compilation of material properties and to summarize possible uses and advantages in device applications. We discuss Ga2O3, Al2O3, In2O3, SnO2, ZnO, CdO, NiO, CuO, and Sc2O3. We outline the crystal structure of the oxides, and we present lattice parameters of the stable phases and a discussion of the metastable polymorphs. We highlight electrical properties such as bandgap energy, carrier mobility, effective carrier masses, dielectric constants, and electrical breakdown field. Based on literature availability, we review the temperature dependence of properties such as bandgap energy and carrier mobility among the oxides. Infrared and Raman modes are presented and discussed for each oxide providing insight into the phonon properties. The phonon properties also provide an explanation as to why some of the oxide parameters experience limitations due to phonon scattering such as carrier mobility. Thermal properties of interest include the coefficient of thermal expansion, Debye temperature, thermal diffusivity, specific heat, and thermal conductivity. Anisotropy is evident in the non-cubic oxides, and its impact on bandgap energy, carrier mobility, thermal conductivity, coefficient of thermal expansion, phonon modes, and carrier effective mass is discussed. Alloys, such as AlGaO, InGaO, (AlxInyGa1-x-y)(2)O-3, ZnGa2O4, ITO, and ScGaO, were included where relevant as they have the potential to allow for the improvement and alteration of certain properties. This Review provides a fundamental material perspective on the application space of semiconducting oxide-based devices in a variety of electronic and optoelectronic applications.& nbsp;Published under an exclusive license by AIP Publishing

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  • Mock, Alyssa L.CNR, DC 20001 USA; Weber State Univ, UT 84408 USA (author)
  • Jacobs, Alan G.US Naval Res Lab, DC 20375 USA (author)
  • Schubert, MathiasLinköpings universitet,Halvledarmaterial,Tekniska fakulteten,Univ Nebraska, NE 68588 USA(Swepub:liu)schma39 (author)
  • Zhang, YuhaoVirginia Polytech Inst & State Univ, VA 24060 USA (author)
  • Tadjer, Marko J.US Naval Res Lab, DC 20375 USA (author)
  • Virginia Polytech Inst & State Univ, VA 24060 USA; US Naval Res Lab, DC 20375 USACNR, DC 20001 USA; Weber State Univ, UT 84408 USA (creator_code:org_t)

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  • In:Applied Physics Reviews: AIP Publishing9:11931-9401

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