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  • Chen, JianhuaYunnan Univ, Peoples R China; Northwestern Univ, IL 60208 USA; Northwestern Univ, IL 60208 USA; Southern Univ Sci & Technol SUSTech, Peoples R China; Southern Univ Sci & Technol SUSTech, Peoples R China (author)

Highly stretchable organic electrochemical transistors with strain-resistant performance

  • Article/chapterEnglish2022

Publisher, publication year, extent ...

  • 2022-05-02
  • NATURE PORTFOLIO,2022
  • printrdacarrier

Numbers

  • LIBRIS-ID:oai:DiVA.org:liu-185004
  • https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-185004URI
  • https://doi.org/10.1038/s41563-022-01239-9DOI

Supplementary language notes

  • Language:English
  • Summary in:English

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  • Subject category:ref swepub-contenttype
  • Subject category:art swepub-publicationtype

Notes

  • Funding Agencies|Air Force Office of Scientific Research (AFOSR) [FA9550-18-1-0320]; Northwestern University Materials Research Science and Engineering Center (NU-MRSEC) [NSF DMR-1720139]; Flexterra Corporation; Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource [NSF NNCI-1542205]; MRSEC programme [NSF DMR-1121262]; International Institute for Nanotechnology; Keck Foundation; State of Illinois, through the International Institute for Nanotechnology; US Department of Energy [DE-AC02-06CH11357]; National Natural Science Foundation of China [61804073, 12072057, U1830207]; Dalian Outstanding Young Talents in Science and Technology [2021RJ06]; LiaoNing Revitalization Talents Program [XLYC2007196]; Fundamental Research Funds for the Central Universities [DUT20RC(3)032]; City University of Hong Kong [9610423, 9667199]; Research Grants Council of the Hong Kong Special Administrative Region [21210820]; Intelligence Community Postdoctoral Research Fellowship Program; Guangdong Provincial Key Laboratory Program from the Department of Science and Technology of Guangdong Province [2021B1212040001]
  • Realizing fully stretchable electronic materials is central to advancing new types of mechanically agile and skin-integrable optoelectronic device technologies. Here we demonstrate a materials design concept combining an organic semiconductor film with a honeycomb porous structure with biaxially prestretched platform that enables high-performance organic electrochemical transistors with a charge transport stability over 30-140% tensional strain, limited only by metal contact fatigue. The prestretched honeycomb semiconductor channel of donor-acceptor polymer poly(2,5-bis(2-octyldodecyl)-3,6-di(thiophen-2-yl)-2,5-diketo-pyrrolopyrrole-alt-2,5-bis(3-triethyleneglycoloxy-thiophen-2-yl) exhibits high ion uptake and completely stable electrochemical and mechanical properties over 1,500 redox cycles with 10(4) stretching cycles under 30% strain. Invariant electrocardiogram recording cycles and synapse responses under varying strains, along with mechanical finite element analysis, underscore that the present stretchable organic electrochemical transistor design strategy is suitable for diverse applications requiring stable signal output under deformation with low power dissipation and mechanical robustness. Highly stretchable organic electrochemical transistors with stable charge transport under severe tensional strains are demonstrated using a honeycomb semiconducting polymer morphology, thereby enabling controllable signal output for diverse stretchable bioelectronic applications.

Subject headings and genre

Added entries (persons, corporate bodies, meetings, titles ...)

  • Huang, WeiNorthwestern Univ, IL 60208 USA; Northwestern Univ, IL 60208 USA; Univ Elect Sci & Technol China UESTC, Peoples R China (author)
  • Zheng, DingNorthwestern Univ, IL 60208 USA; Northwestern Univ, IL 60208 USA (author)
  • Xie, ZhaoqianDalian Univ Technol, Peoples R China; City Univ Hong Kong, Peoples R China; Dalian Univ Technol, Peoples R China (author)
  • Zhuang, XinmingNorthwestern Univ, IL 60208 USA; Northwestern Univ, IL 60208 USA; Univ Elect Sci & Technol China UESTC, Peoples R China (author)
  • Zhao, DanNorthwestern Univ, IL 60208 USA; Northwestern Univ, IL 60208 USA; Univ Elect Sci & Technol China UESTC, Peoples R China (author)
  • Chen, YaoNorthwestern Univ, IL 60208 USA; Northwestern Univ, IL 60208 USA (author)
  • Su, NingNorthwestern Univ, IL 60208 USA; Northwestern Univ, IL 60208 USA (author)
  • Chen, HongmingNorthwestern Univ, IL 60208 USA; Northwestern Univ, IL 60208 USA (author)
  • Pankow, Robert M.Northwestern Univ, IL 60208 USA; Northwestern Univ, IL 60208 USA (author)
  • Gao, ZhanCity Univ Hong Kong, Peoples R China (author)
  • Yu, JunshengUniv Elect Sci & Technol China UESTC, Peoples R China (author)
  • Guo, XugangSouthern Univ Sci & Technol SUSTech, Peoples R China; Southern Univ Sci & Technol SUSTech, Peoples R China (author)
  • Cheng, YuhuaUniv Elect Sci & Technol China UESTC, Peoples R China (author)
  • Strzalka, JosephArgonne Natl Lab, IL 60439 USA (author)
  • Yu, XingeCity Univ Hong Kong, Peoples R China (author)
  • Marks, Tobin J.Northwestern Univ, IL 60208 USA; Northwestern Univ, IL 60208 USA (author)
  • Facchetti, AntonioLinköpings universitet,Laboratoriet för organisk elektronik,Tekniska fakulteten,Northwestern Univ, IL 60208 USA; Northwestern Univ, IL 60208 USA; Flexterra Inc, IL 60077 USA(Swepub:liu)antfa16 (author)
  • Yunnan Univ, Peoples R China; Northwestern Univ, IL 60208 USA; Northwestern Univ, IL 60208 USA; Southern Univ Sci & Technol SUSTech, Peoples R China; Southern Univ Sci & Technol SUSTech, Peoples R ChinaNorthwestern Univ, IL 60208 USA; Northwestern Univ, IL 60208 USA; Univ Elect Sci & Technol China UESTC, Peoples R China (creator_code:org_t)

Related titles

  • In:Nature Materials: NATURE PORTFOLIO21, s. 564-5711476-11221476-4660

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