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Epitaxial growth of...
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Gogova, Daniela,1967-Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Centre for III-nitride technology (C3NiT)
(author)
Epitaxial growth of β-Ga2O3 by hot-wall MOCVD
- Article/chapterEnglish2022
Publisher, publication year, extent ...
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AIP Publishing,2022
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printrdacarrier
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LIBRIS-ID:oai:DiVA.org:liu-185208
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-185208URI
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https://doi.org/10.1063/5.0087571DOI
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Language:English
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Summary in:English
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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Funding: Swedish Energy Agency [P45396-1]; Swedish Governmental Agency for Innovation Systems (VINNOVA) [2016-05190]; Ericsson; Gotmic; Swedish Research Council VR [2016-00889, 2017-03714]; Swedish Foundation for Strategic Research [RIF14-055, RIF14-074, EM16-0024]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University; SFO Mat LiU [2009-00971]; National Science Foundation (NSF); NSF [DMR 1808715]; Linkoeping University [OIA-2044049]; NSF/EPSCoR RII Track-1: Emergent Quantum Materials and Technologies (EQUATE); Chalmers University of Technology [FA9550-18-1-0360, FA9550-19-S-0003, FA9550-21-1-0259]; Air Force Office of Scientific Research; Epiluvac; KAW Foundation; FMV; Hexagem; Hitachi Energy; On Semiconductor; Saab; SweGaN; UMS
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The hot-wall metalorganic chemical vapor deposition (MOCVD) concept, previously shown to enable superior material quality and high performance devices based on wide bandgap semiconductors, such as Ga(Al)N and SiC, has been applied to the epitaxial growth of beta-Ga2O3. Epitaxial beta-Ga2O3 layers at high growth rates (above 1 mu m/h), at low reagent flows, and at reduced growth temperatures (740 degrees C) are demonstrated. A high crystalline quality epitaxial material on a c-plane sapphire substrate is attained as corroborated by a combination of x-ray diffraction, high-resolution scanning transmission electron microscopy, and spectroscopic ellipsometry measurements. The hot-wall MOCVD process is transferred to homoepitaxy, and single-crystalline homoepitaxial beta-Ga2O3 layers are demonstrated with a 201 rocking curve width of 118 arc sec, which is comparable to those of the edge-defined film-fed grown (201) beta-Ga2O3 substrates, indicative of similar dislocation densities for epilayers and substrates. Hence, hot-wall MOCVD is proposed as a prospective growth method to be further explored for the fabrication of beta-Ga2O3.
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Ghezellou, Misagh,1988-Linköpings universitet,Halvledarmaterial,Tekniska fakulteten(Swepub:liu)misgh00
(author)
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Tran, Dat Q.Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Centre for III-nitride technology (C3NiT)(Swepub:liu)dattr18
(author)
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Richter, SteffenLinköpings universitet,Halvledarmaterial,Tekniska fakulteten,Solid State Physics and NanoLund, Lund University, P. O. Box 118, 221 00 Lund, Sweden,Centre for III-nitride technology (C3NiT)(Swepub:liu)steri20
(author)
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Papamichail, Alexis,1990-Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Centre for III-nitride technology (C3NiT)(Swepub:liu)alepa21
(author)
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ul-Hassan, Jawad,1974-Linköpings universitet,Halvledarmaterial,Tekniska fakulteten(Swepub:liu)jawul47
(author)
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Persson, Axel R.Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten,Centre for III-nitride technology (C3NiT)(Swepub:liu)axepe80
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Persson, Per,1971-Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten(Swepub:liu)perpe25
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Kordina, OlofLinköpings universitet,Institutionen för fysik, kemi och biologi,Tekniska fakulteten,Centre for III-nitride technology (C3NiT)(Swepub:liu)n/a
(author)
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Monemar, Bo,1942-Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Centre for III-nitride technology (C3NiT)(Swepub:liu)bomo46
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Hilfiker, MatthewDepartment of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, USA
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Schubert, Mathias,1966-Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, USA,Centre for III-nitride technology (C3NiT)(Swepub:liu)schma39
(author)
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Paskov, Plamen P.,1959-Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Centre for III-nitride technology (C3NiT)(Swepub:liu)plapa31
(author)
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Darakchieva, Vanya,1971-Linköpings universitet,Halvledarmaterial,Tekniska fakulteten,Solid State Physics and NanoLund, Lund University, P. O. Box 118, 221 00 Lund, Sweden,Centre for III-nitride technology (C3NiT)(Swepub:liu)vanda79
(author)
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Linköpings universitetHalvledarmaterial
(creator_code:org_t)
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In:AIP Advances: AIP Publishing12:52158-3226
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