Ion implantation effects on the characteristics of 8-Ga2O3 epilayers grown on sapphire by MOCVD

• In this study, the Si-ions implantation technique with different doses from 1 x 1014 to 1 x 1015 cm-2 and dose energy 30, 40 and 50 keV was used to tune the electrical properties in unintentionally doped (UID) 8-Ga2O3 epilayers grown on the sapphire substrates by metalorganic chemical vapor deposition (MOCVD). A high quality UID 8-Ga2O3 epilayers were fabricated using the optimized growth parameters of MOCVD. The UID and Si-ions implanted 8-Ga2O3 epilayers were examined and results were compared with the help of X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, and transmission electron microscopy. Si-ions implantation parameters were also simulated by stopping and range of ions in matter software (SRIM) and actual Si-ions concentration was measured by secondary ions mass spectroscopy. The electrical properties of the implanted 8-Ga2O3 epilayers were measured by transmission length method and Hall measurements. The sheet resistivity for the 8-Ga2O3epilayers with Si-ion dose of 1 x 1014, 6 x 1014 and 1 x 1015 cm-2 were found as 2.047, 0.158 and 0.144 Cd cm, respectively measured by Hall measurements and the electron carrier concentrations for the above doses were 4.39 x 1018, 6.86 x 1018 and 7.98 x 1019 cm-3. From the above results, the ion implantation was demonstrated to effectively reduce the resistivity with the high carrier concentrations.

Ämnesord

NATURVETENSKAP  -- Kemi -- Materialkemi (hsv//swe)

NATURAL SCIENCES  -- Chemical Sciences -- Materials Chemistry (hsv//eng)

Nyckelord

Si -ions implantation; Transmission length method and Hall; measurements

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