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Ion implantation effects on the characteristics of 8-Ga2O3 epilayers grown on sapphire by MOCVD
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- Horng, Ray-Hua (författare)
- Natl Yang Ming Chiao Tung Univ, Taiwan; Natl Yang Ming Chiao Tung Univ, Taiwan
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- Sood, Apoorva (författare)
- Natl Yang Ming Chiao Tung Univ, Taiwan
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- Tarntair, Fu-Gow (författare)
- Natl Yang Ming Chiao Tung Univ, Taiwan
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- Wuu, Dong-Sing (författare)
- Natl Chi Nan Univ, Taiwan; Natl Chi Nan Univ, Taiwan
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- Hsiao, Ching-Lien (författare)
- Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
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- Pratap, Singh Jitendra (författare)
- Indian Inst Technol Delhi, India
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(creator_code:org_t)
- ELSEVIER SCI LTD, 2022
- Engelska.
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Ingår i: Ceramics International. - : ELSEVIER SCI LTD. - 0272-8842 .- 1873-3956. ; 48:24, s. 36425-36432
- Relaterad länk:
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https://liu.diva-por... (primary) (Raw object)
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- In this study, the Si-ions implantation technique with different doses from 1 x 1014 to 1 x 1015 cm-2 and dose energy 30, 40 and 50 keV was used to tune the electrical properties in unintentionally doped (UID) 8-Ga2O3 epilayers grown on the sapphire substrates by metalorganic chemical vapor deposition (MOCVD). A high quality UID 8-Ga2O3 epilayers were fabricated using the optimized growth parameters of MOCVD. The UID and Si-ions implanted 8-Ga2O3 epilayers were examined and results were compared with the help of X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, and transmission electron microscopy. Si-ions implantation parameters were also simulated by stopping and range of ions in matter software (SRIM) and actual Si-ions concentration was measured by secondary ions mass spectroscopy. The electrical properties of the implanted 8-Ga2O3 epilayers were measured by transmission length method and Hall measurements. The sheet resistivity for the 8-Ga2O3epilayers with Si-ion dose of 1 x 1014, 6 x 1014 and 1 x 1015 cm-2 were found as 2.047, 0.158 and 0.144 Cd cm, respectively measured by Hall measurements and the electron carrier concentrations for the above doses were 4.39 x 1018, 6.86 x 1018 and 7.98 x 1019 cm-3. From the above results, the ion implantation was demonstrated to effectively reduce the resistivity with the high carrier concentrations.
Ämnesord
- NATURVETENSKAP -- Kemi -- Materialkemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences -- Materials Chemistry (hsv//eng)
Nyckelord
- Si -ions implantation; Transmission length method and Hall; measurements
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)