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Low-Field Microwave...
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Bulancea Lindvall, OscarLinköpings universitet,Teoretisk Fysik,Tekniska fakulteten
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Low-Field Microwave-Free Magnetometry Using the Dipolar Spin Relaxation of Quartet Spin States in Silicon Carbide
- Artikel/kapitelEngelska2023
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AMER PHYSICAL SOC,2023
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LIBRIS-ID:oai:DiVA.org:liu-193998
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-193998URI
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https://doi.org/10.1103/PhysRevApplied.19.034006DOI
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Språk:engelska
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Sammanfattning på:engelska
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Funding Agencies|Knut and Alice Wallenberg Foundation [KAW 2018.0071]; Swedish e -Science Research Center (SeRC); Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkping University (LiU) [2009-00971]; European Union project QuanTELCO [862721]; National Research, Development, and Innovation Office of Hungary within the Quantum Information National Laboratory of Hungary [2022-2.1.1-NL-2022- 00004, FK 145395]; Swedish National Infrastructure for Computing (SNIC) - Swedish Research Council [2018-05973]; LiU local resources at the National Supercomputer Centre (NSC) [2015-00017-60]
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Paramagnetic defects and nuclear spins are the major sources of magnetic-field-dependent spin relaxation in point-defect quantum bits. The detection of related optical signals has led to the development of advanced relaxometry applications with high spatial resolution. The nearly degenerate quartet ground state of the silicon-vacancy qubit in silicon carbide (SiC) is of special interest in this respect, as it gives rise to relaxation-rate extrema at vanishing magnetic field values and emits in the first near-infrared transmission window of biological tissues, providing an opportunity for the development of sensing applications for medicine and biology. However, the relaxation dynamics of the silicon-vacancy center in SiC have not yet been fully explored. In this paper, we present results from a comprehensive theoretical investigation of the dipolar spin relaxation of the quartet spin states in various local spin environments. We discuss the underlying physics and quantify the magnetic field and spin-bath-dependent relaxation time T1. Using these findings, we demonstrate that the silicon-vacancy qubit in SiC can implement microwave-free low-magnetic-field quantum sensors of great potential.
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Biuppslag (personer, institutioner, konferenser, titlar ...)
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Eiles, Matthew T.Max Planck Inst Phys Komplexer Syst, Germany
(författare)
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Nguyen, Son TienLinköpings universitet,Halvledarmaterial,Tekniska fakulteten(Swepub:liu)nguso90
(författare)
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Abrikosov, IgorLinköpings universitet,Teoretisk Fysik,Tekniska fakulteten(Swepub:liu)igoab43
(författare)
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Ivády, ViktorLinköpings universitet,Teoretisk Fysik,Tekniska fakulteten,Max Planck Inst Phys Komplexer Syst, Germany; Eotvos Lorand Univ, Hungary; MTA ELTE Lendulet Momentum NewQubit Res Grp, Hungary(Swepub:liu)vikiv58
(författare)
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Linköpings universitetTeoretisk Fysik
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Ingår i:Physical Review Applied: AMER PHYSICAL SOC19:32331-7019
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