Search: WFRF:(Berlind Torun 1965 ) >
Microstructure, mec...
Microstructure, mechanical properties, and wetting behaviorof Si-C-N thin films grown by reactive magnetron sputtering
-
- Berlind, Torun, 1965- (author)
- Linköpings universitet,Tillämpad optik,Tekniska högskolan
-
- Hellgren, Niklas (author)
- Frederick Seitz Materials Research Laboratory, University of Illinois, 104 South Goodwin Avenue, Urbana, IL 61801, USA
-
- Johansson, Mats P. (author)
- Thin Film Electronics AB, A°gatan 29, S-582 22 Link¨oping, Sweden
-
show more...
-
- Hultman, Lars (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska högskolan
-
show less...
-
(creator_code:org_t)
- Elsevier, 2001
- 2001
- English.
-
In: Surface and Coatings Technology. - : Elsevier. - 0257-8972. ; 141:2-3, s. 145-155
- Related links:
-
http://urn.kb.se/res...
-
show more...
-
https://urn.kb.se/re...
-
https://doi.org/10.1...
-
show less...
Abstract
Subject headings
Close
- Silicon–carbon–nitride (Si–C–N) thin films were deposited by reactive magnetron co-sputtering of C and Si targets in a mixed Ar/N2 discharge. Films were grown to a thickness of more than 0.5 μm on graphite and Si(001) substrates held at a negative floating potential of −35 V, and substrate temperature between 100 and 700°C. The total pressure was constant at 0.4 Pa (3 mtorr), and the nitrogen fraction in the gas mixture was varied between 0 and 100%. As-deposited films were analyzed with respect to composition, state of chemical bonding, microstructure, mechanical properties, and wetting behavior by Rutherford backscattering spectroscopy (RBS), energy dispersive spectroscopy (EDS), X-ray photoelectron spectrometry (XPS), transmission electron microscopy (TEM), scanning electron microscopy (SEM), nanoindentation and contact angle measurements, respectively. Depending on the deposition condition, ternary SixCyNz films within the composition range 1≤x≤34 at.%, 34≤y≤81 at.%, and 16.5≤z≤42 at.% were prepared with a textured, amorphous-to-graphite-like microstructure. For Si–C–N films with low Si content, C---C, C---N and Si---C bonds were present. At higher Si content, N preferentially bonds to Si, while less C---N bonds were observed. Films containing more than 12 at.% of Si contained widely dispersed crystallites, 2–20 nm in diameter. Incorporation of a few at.% Si resulted in a dramatic reduction of the film surface energy compared to pure CN films. The measured contact angles using distilled water and glycerol liquids were for some films comparable with those on a polytetrafluoroethylene (PTFE), Teflon® surface. The hardness of Si–C–N films could be varied over the range 9–28 GPa.
Keyword
- Silicon-carbon-nitride thin films; Magnetron sputtering; Properties
- NATURAL SCIENCES
- NATURVETENSKAP
Publication and Content Type
- ref (subject category)
- art (subject category)
Find in a library
To the university's database