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HiPIMS-grown AlN bu...
HiPIMS-grown AlN buffer for threading dislocation reduction in DC-magnetron sputtered GaN epifilm on sapphire substrate
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- Chang, Jui-Che (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
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- Tseng, Eric Nestor, Postdoktor (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
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- Lo, Yi-Ling (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
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- Nayak, Sanjay Kumar (author)
- Linköpings universitet,Nanostrukturerade material,Tekniska fakulteten
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- Lundin, Daniel, 1980- (author)
- Linköpings universitet,Plasma och ytbeläggningsfysik,Tekniska fakulteten
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- Persson, Per O. Å., 1971- (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
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- Horng, Ray-Hua (author)
- National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
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- Hultman, Lars, Professor, 1960- (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
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- Birch, Jens, 1960- (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
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- Hsiao, Ching-Lien, 1975- (author)
- Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
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(creator_code:org_t)
- PERGAMON-ELSEVIER SCIENCE LTD, 2023
- 2023
- English.
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In: Vacuum. - : PERGAMON-ELSEVIER SCIENCE LTD. - 0042-207X .- 1879-2715. ; 217
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https://doi.org/10.1...
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https://liu.diva-por... (primary) (Raw object)
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Abstract
Subject headings
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- Gallium nitride (GaN) epitaxial films on sapphire (Al2O3) substrates have been grown using reactive magnetron sputter epitaxy with a liquid Ga target. Threading dislocations density (TDD) of sputtered GaN films was reduced by using an inserted high-quality aluminum nitride (AlN) buffer layer grown by reactive high power impulse magnetron sputtering (R-HiPIMS) in a gas mixture of Ar and N2. After optimizing the Ar/N2 pressure ratio and deposition power, a high-quality AlN film exhibiting a narrow full-width at half-maximum (FWHM) value of the double-crystal x-ray rocking curve (DCXRC) of the AlN(0002) peak of 0.086° was obtained by R-HiPIMS. The mechanism giving rise the observed quality improvement is attributed to the enhancement of kinetic energy of the adatoms in the deposition process when operated in a transition mode. With the inserted HiPIMS-AlN as a buffer layer for direct current magnetron sputtering (DCMS) GaN growth, the FWHM values of GaN(0002) and (10 1‾ 1) XRC decrease from 0.321° to 0.087° and from 0.596° to 0.562°, compared to the direct growth of GaN on sapphire, respectively. An order of magnitude reduction from 2.7 × 109 cm−2 to 2.0 × 108 cm−2 of screw-type TDD calculated from the FWHM of the XRC data using the inserted HiPIMS-AlN buffer layer demonstrates the improvement of crystal quality of GaN. The result of TDD reduction using the HiPIMS-AlN buffer was also verified by weak beam dark-field (WBDF) cross-sectional transmission electron microscopy (TEM).
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- GaN; Magnetron sputtering; HiPIMS; Dislocations; XRCTEM
Publication and Content Type
- ref (subject category)
- art (subject category)
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- By the author/editor
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Chang, Jui-Che
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Tseng, Eric Nest ...
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Lo, Yi-Ling
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Nayak, Sanjay Ku ...
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Lundin, Daniel, ...
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Persson, Per O. ...
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Horng, Ray-Hua
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Hultman, Lars, P ...
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Birch, Jens, 196 ...
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Hsiao, Ching-Lie ...
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- About the subject
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- NATURAL SCIENCES
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NATURAL SCIENCES
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and Physical Science ...
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and Condensed Matter ...
- Articles in the publication
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Vacuum
- By the university
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Linköping University