Raman fingerprint of the graphene buffer layer grown on the Si-terminated face of 4H-SiC(0001): Experiment and theory

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Milenov, TeodorBulgarian Acad Sci, Bulgaria (author)

Raman fingerprint of the graphene buffer layer grown on the Si-terminated face of 4H-SiC(0001): Experiment and theory

Article/chapterEnglish2023

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2023
WILEY,2023
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LIBRIS-ID:oai:DiVA.org:liu-199976
https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-199976URI
https://doi.org/10.1002/jrs.6642DOI

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Language:English
Summary in:English

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Subject category:ref swepub-contenttype
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Funding Agencies|National Science Fund of Bulgaria; [KP-06-H58/2-16.11.2021]
In this work, we present the results of measurements of the Raman spectrum of the root 3x root 3R30 degrees reconstruction of graphene grown on 4H-SiC(0001), the so-called buffer layer. The extracted Raman spectrum of the buffer layer shows bands, different from those of graphene, which can be attributed to the interaction of the buffer layer with the SiC substrate. In particular, in the high-wavenumber region, at least three bands are observed in the wavenumber regions 1,350-1,420, 1,470-1,490 and 1,520-1,570 cm-1. The assignment of the buffer layer bands is supported here by tight-binding simulations of the one-phonon density of states for structures with a sufficiently large number of Si-C bilayers for reaching convergence. The converged phonon density of states is found to be in semi-quantitative agreement with the latter two bands, and therefore, the tight-binding predictions of the lattice dynamics of the structure can be used for their assignment to buffer layer vibrations. Namely, the Raman band at about 1,550 cm-1 can be assigned to modified in-plane optical phonon branches of graphene, while the Raman band at about 1,490 cm-1 can be assigned to modified folded parts of these branches inside the Brillouin zone of the buffer layer and can be considered as a Raman fingerprint of the buffer layer. We present the results of measurements of the Raman spectrum of the root 3x root 3R30 degrees reconstruction of graphene grown on 4H-SiC(0001), the so-called buffer layer (BL) in the wavenumber region 1,200-1,650 cm-1. The assignment of the BL bands is supported by tight-binding simulations of the one-phonon density of states (DOS) for structures with a sufficiently large number of Si-C bilayers for reaching convergence. The converged phonon DOS is found to be in semi-quantitative agreement with the experimental Raman spectra.image

Subject headings and genre

NATURVETENSKAP Fysik Den kondenserade materiens fysik hsv//swe
NATURAL SCIENCES Physical Sciences Condensed Matter Physics hsv//eng
buffer layer; density functional theory simulations; graphene; SiC

Added entries (persons, corporate bodies, meetings, titles ...)

Rafailov, PeterBulgarian Acad Sci, Bulgaria (author)
Yakimova, RositsaLinköpings universitet,Halvledarmaterial,Tekniska fakulteten(Swepub:liu)rosia15 (author)
Shtepliuk, IvanLinköpings universitet,Halvledarmaterial,Tekniska fakulteten(Swepub:liu)ivash69 (author)
Popov, ValentinSofia Univ, Bulgaria (author)
Bulgarian Acad Sci, BulgariaHalvledarmaterial (creator_code:org_t)

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In:Journal of Raman Spectroscopy: WILEY0377-04861097-4555

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By the author/editor: Milenov, Teodor; Rafailov, Peter; Yakimova, Rosits ...; Shtepliuk, Ivan; Popov, Valentin

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NATURAL SCIENCES: NATURAL SCIENCES; and Physical Science ...; and Condensed Matter ...

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By the university: Linköping University

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