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High growth rate ma...
High growth rate magnetron sputter epitaxy of GaN using a solid Ga target
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- Pingen, Katrin (författare)
- Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten,Fraunhofer Inst Organ Elect, Germany; Tech Univ Dresden, Germany
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- Hinz, Alexander M. (författare)
- Fraunhofer Inst Organ Elect, Germany; Tech Univ Dresden, Germany
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- Sandström, Per (författare)
- Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
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- Wolff, Niklas (författare)
- Univ Kiel, Germany; Univ Kiel, Germany
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- Kienle, Lorenz (författare)
- Univ Kiel, Germany; Univ Kiel, Germany
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- Scipioni, Larry (författare)
- PVD Prod Inc, MA 01887 USA
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- Greer, James (författare)
- PVD Prod Inc, MA 01887 USA
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- von Hauff, Elizabeth (författare)
- Fraunhofer Inst Organ Elect, Germany; Tech Univ Dresden, Germany
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- Hultman, Lars (författare)
- Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
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- Birch, Jens (författare)
- Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
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- Hsiao, Ching-Lien (författare)
- Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
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(creator_code:org_t)
- PERGAMON-ELSEVIER SCIENCE LTD, 2024
- 2024
- Engelska.
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Ingår i: Vacuum. - : PERGAMON-ELSEVIER SCIENCE LTD. - 0042-207X .- 1879-2715. ; 220
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Magnetron sputter epitaxy (MSE) is a promising processing route for group-III nitride semiconductors, with the potential to enable high-quality and low cost GaN growth for widespread use. However, fundamental techno-logical hurdles must be overcome to enable the adoption of MSE in industrial production. Here, we present a new UHV-compatible magnetron design with high-performance cooling, enabling high GaN growth rates at high growth temperatures using a solid Ga target. The magnetron is tested with a wide range of process parameters and a stable process is feasible while maintaining the solid state of the Ga target. High GaN growth rates of up to 5 mu m/h are achieved at room temperature and a growth rate of 4 mu m/h at high temperature, which is one order of magnitude higher compared to MSE with a liquid target. We grow GaN on c-plane sapphire substrates and show the impact of partial pressure ratio and target-to-substrate distance (TSD) on growth rate, film morphology and crystal quality of GaN films with scanning electron microscopy and X-ray diffraction. While the growth rate and film morphology are strongly impacted by the process parameter variation, the crystal quality is further impacted by the overall film thickness. For a 2 mu m thick GaN film a full width at half maximum of X-ray rocking curve (omega-FWHM) of GaN 10 1 1 reflection of 0.32 degrees is achieved. We demonstrate a process window for growth of dense and smooth GaN films with high crystal quality using low N2 flow rates and high TSD. By introducing a 20 nm AlN nucleation layer prior to the growth of 390 nm GaN, the omega-FWHM of GaN 0002 reflection of 0.19 degrees is achieved. The epitaxially grown crystalline structure is precisely examined by transmission electron microscopy.
Ämnesord
- NATURVETENSKAP -- Kemi -- Oorganisk kemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences -- Inorganic Chemistry (hsv//eng)
Nyckelord
- GaN; Solid Ga; Magnetron sputter epitaxy; Growth rate
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Vacuum
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Pingen, Katrin
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Hinz, Alexander ...
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Sandström, Per
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Wolff, Niklas
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Kienle, Lorenz
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Scipioni, Larry
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visa fler...
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Greer, James
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von Hauff, Eliza ...
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Hultman, Lars
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Birch, Jens
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Hsiao, Ching-Lie ...
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Linköpings universitet