Time-delayed transformation of defects in zinc oxide layers grown along the zinc-face using a hydrothermal technique

• A study of deep level defects in a hydrothermally grown, intrinsically n-type zinc oxide (ZnO) device has been carried out using conventional deep level transient spectroscopy (DLTS). Performed under variable measurement conditions, DLTS demonstrates two electron trap levels, E-1 (dominant) and E-2, with activation energies E-c-0.22 +/- 0.02 eV and E-c-0.47 +/- 0.05 eV, respectively. A time-delayed transformation of shallow donor defects zinc(interstitial) and vacancy(oxygen) (Zn-i-VO) into the E-1 level has been observed. While the x-ray diffraction measurements reveal that the preferred direction of ZnO growth is along the (10 (1) over bar0) plane, i.e., the (Zn-i-V-O) complex, it is assumed that the (Zn-i-V-O) complex is transformed into a zinc antisite (Zn-O) under favorable conditions. As a result, the free carrier concentration decreases with increasing trap concentration. Henceforth, the E-1 level exhibiting the increase in concentration is attributed to ZnO.

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

TECHNOLOGY

TEKNIKVETENSKAP

Publication and Content Type

ref (subject category)

art (subject category)