L773:0013 5194 OR L773:1350 911X
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- Andersson, Stefan,1975-Linköpings universitet,Tekniska högskolan,Elektroniska komponenter (author)
Direct experimental verification of shot noise in short channel MOS transistors
- Article/chapterEnglish2005
Publisher, publication year, extent ...
- Institution of Engineering and Technology (IET),2005
- printrdacarrier
Numbers
- LIBRIS-ID:oai:DiVA.org:liu-30148
- https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-30148URI
- https://doi.org/10.1049/el:20051474DOI
Supplementary language notes
- Language:English
- Summary in:English
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- SwePubSwePub
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Notes
- Drain noise current was measured at an extended temperature range on n-MOS transistors of various lengths made in a 0.18 urn process. A comparison with theoretical noise models strongly indicates the mechanism of shot noise produced near the source by diffusion currents, as proposed by Obrecht et al. © IEE 2005.
Subject headings and genre
- experimental verification
- shot noise
- short channel MOS
- TECHNOLOGY
- TEKNIKVETENSKAP
Added entries (persons, corporate bodies, meetings, titles ...)
- Svensson, Christer,1941-Linköpings universitet,Tekniska högskolan,Elektroniska komponenter(Swepub:liu)chrsv76 (author)
- Linköpings universitetTekniska högskolan (creator_code:org_t)
Related titles
- In:Electronics Letters: Institution of Engineering and Technology (IET)41:15, s. 869-8710013-51941350-911X
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