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Deformation potenti...
Deformation potentials of the E1 (TO) and E2 modes of InN
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- Darakchieva, Vanya, 1971- (author)
- Linköpings universitet,Institutionen för fysik, kemi och biologi
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- Paskov, Plamen, 1959- (author)
- Linköpings universitet,Institutionen för fysik, kemi och biologi
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Valcheva, E (author)
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- Paskova, Tanja, 1961- (author)
- Linköpings universitet,Institutionen för fysik, kemi och biologi
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- Monemar, Bo, 1942- (author)
- Linköpings universitet,Institutionen för fysik, kemi och biologi
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Schubert, M (author)
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Lu, H (author)
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Schaff, W.J. (author)
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(creator_code:org_t)
- AIP Publishing, 2004
- 2004
- English.
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 84:18, s. 3636-3638
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
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- The determination of deformation potentials of E1(TO) and E 2 modes of InN were discussed. The deformation potentials were evaluated for two sets of stiffness constants using x-ray diffraction, IR spectroscopic ellipsometry (IRSE), Raman scattering, and Grüneisen parameter values. The InN layer were grown on GaN buffer layers on (0001) sapphire by molecular beam epitaxy. It was found that the strain-free values of the InN E1(TO) mode was 477.9 cm-1 and 491.9 cm -1 for the E2 modes.
Keyword
- NATURAL SCIENCES
- NATURVETENSKAP
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Darakchieva, Van ...
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Paskov, Plamen, ...
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Valcheva, E
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Paskova, Tanja, ...
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Monemar, Bo, 194 ...
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Schubert, M
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show more...
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Lu, H
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Schaff, W.J.
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show less...
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Applied Physics ...
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Linköping University