Sökning: (swepub) pers:(Larsson Anders) pers:(Larsson Anders 1957) srt2:(2006) >
Nitrogen incorporat...
Nitrogen incorporation in GaNas layers grown by molecular beam epitaxy
-
- Zhao, Qingxiang, 1962 (författare)
- Gothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU),Göteborg University
-
- Wang, Shu Min, 1963 (författare)
- Göteborg University,Chalmers tekniska högskola,Chalmers University of Technology
-
- Sadeghi, Mahdad, 1964 (författare)
- Göteborg University,Chalmers tekniska högskola,Chalmers University of Technology
-
visa fler...
-
- Larsson, Anders, 1957 (författare)
- Göteborg University,Chalmers tekniska högskola,Chalmers University of Technology
-
- Friesel, Milan, 1948 (författare)
- Gothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU),University of Gothenburg,Göteborg University
-
- Willander, Magnus, 1948- (författare)
- Gothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU),University of Gothenburg,Göteborg University
-
- Zhao, Qing Xiang, 1962 (författare)
- Göteborgs universitet,University of Gothenburg
-
visa färre...
-
(creator_code:org_t)
- AIP Publishing, 2006
- 2006
- Engelska.
-
Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 89:3, s. 31907-1-31907-3
- Relaterad länk:
-
http://dx.doi.org/10...
-
visa fler...
-
https://urn.kb.se/re...
-
https://doi.org/10.1...
-
https://gup.ub.gu.se...
-
https://research.cha...
-
visa färre...
Abstract
Ämnesord
Stäng
- GaNAs/GaAs quantum wells with high N concentrations, grown by molecular beam epitaxy, have been investigated by secondary-ion mass spectrometry (SIMS), high resolution x-ray diffraction (XRD), and photoluminescence (PL) measurements. The substitutional N concentration in an 18 nm thick strained GaNAs layer varies from 1.4% to 5.9% when the growth rate is reduced from 1 to 0.2 μm/h. By further reducing the growth rate, more N can be incorporated but relaxation occurs. Both the total N concentration, deduced from SIMS measurements, and the substitutional N concentration, deduced from XRD measurements, increase with reduced growth rate. By comparing the SIMS and XRD results, we found that a large amount of N was not in substitutional position when the substitutional N concentration is high (≫4%). The experimental results also show that there is no detectable change of total and substitutional N concentrations, within the instrument resolutions, after rapid thermal annealing at 700 °C for 30 s. However, PL measurements show a strong blueshift of the emission wavelength after annealing and the PL intensity increases by more than one order of magnitude.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Telekommunikation (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Telecommunications (hsv//eng)
Nyckelord
- TECHNOLOGY
- TEKNIKVETENSKAP
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
Hitta via bibliotek
Till lärosätets databas
- Av författaren/redakt...
-
Zhao, Qingxiang, ...
-
Wang, Shu Min, 1 ...
-
Sadeghi, Mahdad, ...
-
Larsson, Anders, ...
-
Friesel, Milan, ...
-
Willander, Magnu ...
-
visa fler...
-
Zhao, Qing Xiang ...
-
visa färre...
- Om ämnet
-
- TEKNIK OCH TEKNOLOGIER
-
TEKNIK OCH TEKNO ...
-
och Elektroteknik oc ...
-
och Telekommunikatio ...
- Artiklar i publikationen
-
Applied Physics ...
- Av lärosätet
-
Linköpings universitet
-
Göteborgs universitet
-
Chalmers tekniska högskola