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Influence of Cooling Rate after High Temperature Annealing on Deep Levels in High-Purity Semi-Insulating 4H-SiC
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- Gällström, Andreas, 1978- (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Magnusson, Björn, 1970- (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Carlsson, Patrick, 1975- (author)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- (creator_code:org_t)
- Trans Tech Publications, 2007
- 2007
- English.
- In: Materials Science Forum, vol. 556-557. - : Trans Tech Publications. ; , s. 371-
- Conference paper (peer-reviewed)
Abstract
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- The influence of different cooling rates on deep levels in 4H-SiC after high temperature annealing has been investigated. The samples were heated from room temperature to 2300°C, followed by a 20 minutes anneal at this temperature. Different subsequent cooling sequences down to 1100°C were used. The samples have been investigated using photoluminescence (PL) and IV characteristics. The PL intensities of the silicon vacancy (VSi) and UD-2, were found to increase with a faster cooling rate.
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- NATURAL SCIENCES
- NATURVETENSKAP
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