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A surface study of ...
A surface study of wet etched AlGaN epilayers grown by hot-wall MOCVD
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- Syväjärvi, Mikael, 1968- (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Kakanakova-Georgieva, Anelia, 1970- (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Yazdi, Gholamreza, 1966- (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Forsberg, Urban, 1971- (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Janzén, Erik, 1954- (author)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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(creator_code:org_t)
- Elsevier BV, 2007
- 2007
- English.
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In: Journal of Crystal Growth, Vol. 300. - : Elsevier BV. - 0022-0248. ; , s. 242-245
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
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- Epitaxial layers of AlGaN were grown by hot-wall MOCVD and their surfaces wet chemically etched with phosphorous acid. The as-grown surfaces and the development of the etched surfaces after 10 and 20 min of etching were studied with atomic force microscopy (AFM) and CL. In the as-grown layers growth features may be resolved while the RMS is as low as 1.4 Å in a scan area of 2×2 μm. Surfaces etched for 10 min had developed etch pits and a low RMS roughness of 7 Å indicating a uniform quality of the layers. Micrometer scale hexagonal features were observed after 20 min of etching. In some cases a deep hexagonal etch pit is observed in the centre of the hexagonal feature with a 30° rotation to each other, suggesting that the origin is substrate-induced defects. © 2006 Elsevier B.V. All rights reserved.
Keyword
- NATURAL SCIENCES
- NATURVETENSKAP
Publication and Content Type
- ref (subject category)
- kon (subject category)
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