Metamorphic InGaAs quantum wells for light emission at 1.3-1.6 μm

• Metamorphic InGaAs quantum well structures grown on GaAs reveal strong light emission at 1.3-1.6 μm, smooth surface with an average roughness below 2 nm and good rectifying I-V characteristics. Dark line defects are found in the QW. Post growth thermal annealing further improves the luminescence efficiency but does not remove those dark line defects. Some challenges of epitaxial growth using this method for laser applications are discussed. © 2006 Elsevier B.V. All rights reserved.

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

NATURAL SCIENCES

NATURVETENSKAP

Semiconductor physics

Halvledarfysik

metamorphic

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