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Paskov, Plamen,1959-Linköpings universitet,Tekniska högskolan,Halvledarmaterial
(author)
Internal structure of free excitons in GaN
- Article/chapterEnglish2001
Publisher, publication year, extent ...
Numbers
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LIBRIS-ID:oai:DiVA.org:liu-40139
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-40139URI
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https://doi.org/10.1002/1521-3951(200111)228:2<467::AID-PSSB467>3.0.CO;2-2DOI
Supplementary language notes
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Language:English
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Summary in:English
Part of subdatabase
Classification
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Subject category:ref swepub-contenttype
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Subject category:art swepub-publicationtype
Notes
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Polarized photoluminescence is used to study the fine structure of free excitons in thick GaN layers grown on differently oriented sapphire substrates. The singlet-triplet splitting of the A exciton is measured and the exchange interaction constant in GaN is determined. For the samples grown on the a-plane sapphire, splitting of the A and B excitons induced by the uniaxial in-plane stress is also observed.
Subject headings and genre
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NATURAL SCIENCES
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NATURVETENSKAP
Added entries (persons, corporate bodies, meetings, titles ...)
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Paskova, Tanja,1961-Linköpings universitet,Tekniska högskolan,Institutionen för fysik, kemi och biologi(Swepub:liu)tanpa12
(author)
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Holtz, Per-Olof,1951-Linköpings universitet,Tekniska högskolan,Halvledarmaterial(Swepub:liu)perho67
(author)
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Monemar, Bo,1942-Linköpings universitet,Tekniska högskolan,Halvledarmaterial(Swepub:liu)bomo46
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Linköpings universitetTekniska högskolan
(creator_code:org_t)
Related titles
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In:Physica status solidi. B, Basic research228:2, s. 467-4700370-19721521-3951
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